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Jean-Luc Autran
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2020 – today
- 2020
- [c9]S. Guagliardo, Frederic Wrobel
, Ygor Q. Aguiar
Effect of Temperature on Single Event Latchup Sensitivity. DTIS 2020: 1-5
2010 – 2019
- 2018
- [j13]Guenole Lallement
A 2.7 pJ/cycle 16 MHz, 0.7 µW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI. IEEE J. Solid State Circuits 53(7): 2088-2100 (2018) - [j12]Ygor Q. Aguiar
Analysis of the charge sharing effect in the SET sensitivity of bulk 45 nm standard cell layouts under heavy ions. Microelectron. Reliab. 88-90: 920-924 (2018) - [c8]Guenole Lallement, Fady Abouzeid
A 140 nW, 32.768 kHz, 1.9 ppm/°C Leakage-Based Digitally Relocked Clock Reference with 0.1 ppm Long-Term Stability in 28nm FD-SOI. A-SSCC 2018: 197-200 - [c7]Yvan Debizet, Guénolé Lallement, Fady Abouzeid
Q-Learning-based Adaptive Power Management for IoT System-on-Chips with Embedded Power States. ISCAS 2018: 1-5 - 2017
- [j11]Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu
Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. Microelectron. Reliab. 76-77: 53-57 (2017) - [j10]Daniela Munteanu, Jean-Luc Autran, Soilihi Moindjie:
Single-event-transient effects in Junctionless Double-Gate MOSFETs with Dual-Material Gate investigated by 3D simulation. Microelectron. Reliab. 76-77: 719-724 (2017) - [c6]Martin Cochet, Sylvain Clerc, Guenole Lallement, Fady Abouzeid
A 0.40pJ/cycle 981 μm2 voltage scalable digital frequency generator for SoC clocking. A-SSCC 2017: 69-72 - [c5]Guenole Lallement, Fady Abouzeid
A 2.7pJ/cycle 16MHz SoC with 4.3nW power-off ARM Cortex-M0+ core in 28nm FD-SOI. ESSCIRC 2017: 153-162 - 2016
- [j9]Tarek Saad Saoud, Soilihi Moindjie, Daniela Munteanu
Natural radiation events in CCD imagers at ground level. Microelectron. Reliab. 64: 68-72 (2016) - [c4]Martin Cochet, Alberto Puggelli, Ben Keller, Brian Zimmer, Milovan Blagojevic, Sylvain Clerc, Philippe Roche, Jean-Luc Autran, Borivoje Nikolic
On-chip supply power measurement and waveform reconstruction in a 28nm FD-SOI processor SoC. A-SSCC 2016: 125-128 - [c3]Martin Cochet, Sylvain Clerc, Mehdi Naceur, Pierre Schamberger, Damien Croain, Jean-Luc Autran, Philippe Roche:
A 28nm FD-SOI standard cell 0.6-1.2V open-loop frequency multiplier for low power SoC clocking. ISCAS 2016: 1206-1209 - 2015
- [j8]Daniela Munteanu
SEU sensitivity of Junctionless Single-Gate SOI MOSFETs-based 6T SRAM cells investigated by 3D TCAD simulation. Microelectron. Reliab. 55(9-10): 1501-1505 (2015) - [j7]Jean-Luc Autran, Daniela Munteanu
ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure. Microelectron. Reliab. 55(9-10): 1506-1511 (2015) - [j6]Daniela Munteanu
3D simulation of single-event-transient effects in symmetrical dual-material double-gate MOSFETs. Microelectron. Reliab. 55(9-10): 1522-1526 (2015) - [j5]Jean-Luc Autran, Daniela Munteanu
Radiation and COTS at ground level. Microelectron. Reliab. 55(9-10): 2147-2153 (2015) - [c2]Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Victor Malherbe, Philippe Roche:
Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs. IRPS 2015: 2 - [c1]Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Aurelien Patris, Jean-Luc Autran, Philippe Roche:
Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis. IRPS 2015: 11 - 2014
- [j4]Jean-Luc Autran, Daniela Munteanu
Real-time soft-error rate measurements: A review. Microelectron. Reliab. 54(8): 1455-1476 (2014) - [j3]Jean-Luc Autran, Maximilien Glorieux, Daniela Munteanu
Particle Monte Carlo modeling of single-event transient current and charge collection in integrated circuits. Microelectron. Reliab. 54(9-10): 2278-2283 (2014) - [j2]Daniela Munteanu
Radiation sensitivity of junctionless double-gate 6T SRAM cells investigated by 3-D numerical simulation. Microelectron. Reliab. 54(9-10): 2284-2288 (2014) - 2010
- [j1]Jean-Luc Autran, Daniela Munteanu
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. Microelectron. Reliab. 50(9-11): 1822-1831 (2010)
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