Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications.

Sanghyun Ban Jangseop Lee Taehoon Kim Hyunsang Hwang Simple Binary In-Te OTS with Sub-nm HfOₓ Buffer Layer for 3D Vertical X-point Memory Applications. 1-2 2023 VLSI Technology and Circuits https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185213 conf/vlsit/2023 db/conf/vlsit/vlsit2023.html#BanLKH23