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"A 266.7 TOPS/W Computing-in Memory Using Single-Ended 6T 4-kb SRAM in ..."

Cheng-Yao Lo et al. (2024)

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DOI: 10.1109/AICAS59952.2024.10595553

access: closed

type: Conference or Workshop Paper

metadata version: 2024-07-31

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Cheng-Yao Lo, Lean Karlo Santos Tolentino, Jhih-Ying Ke, Jeffrey S. Walling, Yang Yi, Chua-Chin Wang:
A 266.7 TOPS/W Computing-in Memory Using Single-Ended 6T 4-kb SRAM in 16-nm FinFET CMOS Process. AICAS 2024: 90-94

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