"Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories."

Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry (2007)

Details and statistics

DOI: 10.1109/ISCAS.2007.378735

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-26

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.