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"17.2 5.6Mb/mm2 1R1W 8T SRAM arrays operating down to 560mV utilizing ..."

John Keane et al. (2016)

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DOI: 10.1109/ISSCC.2016.7418030

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-26

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John Keane, Jaydeep Kulkarni, Kyung-Hoae Koo, Satyanand Nalam, Zheng Guo, Eric Karl, Kevin Zhang:
17.2 5.6Mb/mm2 1R1W 8T SRAM arrays operating down to 560mV utilizing small-signal sensing with charge-shared bitline and asymmetric sense amplifier in 14nm FinFET CMOS technology. ISSCC 2016: 308-309

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