Takeshi Mizoguchi Toshiyuki Naka Yuta Tanimoto Yasuhiro Okada Wataru Saito Mitiko Miura-Mattausch Hans Jürgen Mattausch Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. 321-328 2017 100-C IEICE Trans. Electron. 3 https://doi.org/10.1587/transele.E100.C.321 http://search.ieice.org/bin/summary.php?id=e100-c_3_321 db/journals/ieicet/ieicet100c.html#MizoguchiNTOSMM17