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"Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D ..."

Sung Chul Hong et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.06.031

access: closed

type: Journal Article

metadata version: 2021-10-14

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Sung Chul Hong, Wang Gu Lee, Won Joong Kim, Jong Hyeong Kim, Jae Pil Jung:
Reduction of defects in TSV filled with Cu by high-speed 3-step PPR for 3D Si chip stacking. Microelectron. Reliab. 51(12): 2228-2235 (2011)

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