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"Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by ..."

W. S. Lau, Joy B. H. Tan, B. P. Singh (2009)

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DOI: 10.1016/J.MICROREL.2009.02.010

access: closed

type: Journal Article

metadata version: 2020-02-22

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W. S. Lau, Joy B. H. Tan, B. P. Singh:
Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching. Microelectron. Reliab. 49(5): 558-561 (2009)

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