<?xml version="1.0" encoding="US-ASCII"?>
<dblp>
<article key="journals/mr/LeeFAYDRCP09" mdate="2022-04-22">
<author>Chi-Woo Lee</author>
<author>Isabelle Ferain</author>
<author>Aryan Afzalian</author>
<author>Ran Yan</author>
<author orcid="0000-0003-1658-8323">Nima Dehdashti</author>
<author>Pedram Razavi</author>
<author>Jean-Pierre Colinge</author>
<author>Jong Tae Park 0003</author>
<title>NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs.</title>
<pages>1044-1047</pages>
<year>2009</year>
<volume>49</volume>
<journal>Microelectron. Reliab.</journal>
<number>9-11</number>
<ee>https://doi.org/10.1016/j.microrel.2009.06.011</ee>
<url>db/journals/mr/mr49.html#LeeFAYDRCP09</url>
</article></dblp>
