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"Relation between UIS withstanding capability and I-V characteristics in ..."

Wataru Saito, Toshiyuki Naka (2017)

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DOI: 10.1016/J.MICROREL.2017.07.009

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/SaitoN17
Wataru Saito, Toshiyuki Naka:
Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs. Microelectron. Reliab. 76-77: 309-313 (2017)

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