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"Angular dependency on heavy-ion-induced single-event multiple transients ..."

Jizuo Zhang et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.10.015

access: closed

type: Journal Article

metadata version: 2025-06-30

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Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang:
Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology. Microelectron. Reliab. 91: 278-282 (2018)

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