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"Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing."

Sang-Myeon Han et al. (2005)

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DOI: 10.1109/JPROC.2005.851535

access: closed

type: Journal Article

metadata version: 2020-10-02

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  - journals/pieee/HanLSPH05
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  - https://dblp.org/rec/journals/pieee/HanLSPH05
Sang-Myeon Han, Min-Cheol Lee, Moon-Young Shin, Joong-Hyun Park, Min-Koo Han:
Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. Proc. IEEE 93(7): 1297-1305 (2005)

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