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Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 382 matches

• 2011
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo:
  Operation of SiC normally-off JFET at the edges of its safe operating area. Microelectron. Reliab. 51(9-11): 1767-1772 (2011)
• 
  Abigail Agwai, Ibrahim Guven, Erdogan Madenci:
  Crack propagation in multilayer thin-film structures of electronic packages using the peridynamic theory. Microelectron. Reliab. 51(12): 2298-2305 (2011)
• 
  Pearl A. Agyakwa, Martin R. Corfield, Li Yang, Jianfeng Li, V. M. F. Marques, C. Mark Johnson:
  Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling. Microelectron. Reliab. 51(2): 406-415 (2011)
• 
  Arash Ahmadi, Mark Zwolinski:
  Fixed-point multiplication: A probabilistic bit-pattern view. Microelectron. Reliab. 51(4): 790-796 (2011)
• 
  F. Alagi:
  A first-order kinetics ageing model for the hot-carrier stress of high-voltage MOSFETs. Microelectron. Reliab. 51(2): 321-325 (2011)
• 
  F. Alagi:
  Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs. Microelectron. Reliab. 51(8): 1283-1288 (2011)
• 
  Mohammed A. Alam, Michael H. Azarian, Michael D. Osterman, Michael G. Pecht:
  Temperature and voltage aging effects on electrical conduction mechanism in epoxy-BaTiO₃ composite dielectric used in embedded capacitors. Microelectron. Reliab. 51(5): 946-952 (2011)
• 
  Blerina Aliaj, Vladislav A. Vashchenko, Andrei Shibkov, Juin J. Liou:
  Self-protection capability of integrated NLDMOS power arrays in ESD pulse regimes. Microelectron. Reliab. 51(12): 2015-2030 (2011)
• 
  Bartomeu Alorda, Gabriel Torrens, Sebastià A. Bota, Jaume Segura:
  8T vs. 6T SRAM cell radiation robustness: A comparative analysis. Microelectron. Reliab. 51(2): 350-359 (2011)
• 
  Joaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre:
  Characterization and modelling of single event transients in LDMOS-SOI FETs. Microelectron. Reliab. 51(9-11): 2004-2009 (2011)
• 
  German A. Alvarez-Botero, Reydezel Torres-Torres, Roberto S. Murphy-Arteaga:
  Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs. Microelectron. Reliab. 51(2): 342-349 (2011)
• 
  Tong An, Fei Qin, Jiangang Li:
  Mechanical behavior of solder joints under dynamic four-point impact bending. Microelectron. Reliab. 51(5): 1011-1019 (2011)
• 
  Bernd K. Appelt, Andy Tseng, Chun-Hsiung Chen, Yi-Shao Lai:
  Fine pitch copper wire bonding in high volume production. Microelectron. Reliab. 51(1): 13-20 (2011)
• 
  Houssam Arbess, Marise Bafleur:
  MOS-IGBT power devices for high-temperature operation in smart power SOI technology. Microelectron. Reliab. 51(9-11): 1980-1984 (2011)
• 
  R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné:
  High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectron. Reliab. 51(12): 2093-2096 (2011)
• 
  Franck Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, Frédéric Boeuf:
  Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies. Microelectron. Reliab. 51(9-11): 1508-1514 (2011)
• 
  Engin Arslan, Serkan Bütün, Yasemin Safak, Hüseyin Çakmak, Hongbo Yu, Ekmel Özbay:
  Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes. Microelectron. Reliab. 51(3): 576-580 (2011)
• 
  Engin Arslan, Serkan Bütün, Yasemin Safak, Habibe Uslu, Ilke Tasçioglu, Semsettin Altindal, Ekmel Özbay:
  Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures. Microelectron. Reliab. 51(2): 370-375 (2011)
• 
  Takashi Asada, Yuji Yagi, Masanori Usui, T. Suzuki, Nobutada Ohno:
  Warpage analysis of layered structures connected by direct brazing. Microelectron. Reliab. 51(9-11): 1836-1839 (2011)
• 
  A. Aubert, Sébastien Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont:
  Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. Microelectron. Reliab. 51(9-11): 1845-1849 (2011)
• 
  Alex Axelevitch, B. Gorenstein, Gady Golan:
  Investigation of the electrical transport mechanism in VO_x thin films. Microelectron. Reliab. 51(12): 2119-2123 (2011)
• 
  Sakir Aydogan, Ümit Incekara, Abdulmecit Türüt:
  The effects of 12 MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device. Microelectron. Reliab. 51(12): 2216-2222 (2011)
• 
  Francisco Aznar, Santiago Celma, Belén Calvo:
  A 0.18 μm CMOS linear-in-dB AGC post-amplifier for optical communications. Microelectron. Reliab. 51(5): 959-964 (2011)
• 
  Toufik Azoui, Patrick Tounsi, Philippe Dupuy, Laurent Guillot, Jean-Marie Dorkel:
  3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs. Microelectron. Reliab. 51(9-11): 1943-1947 (2011)
• 
  V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, Josep Albero:
  Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. Microelectron. Reliab. 51(3): 597-601 (2011)
• 
  Tian Ban, Lirida A. B. Naviner:
  Progressive module redundancy for fault-tolerant designs in nanoelectronics. Microelectron. Reliab. 51(9-11): 1489-1492 (2011)
• 
  Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas:
  Functional fault models for non-scan sequential circuits. Microelectron. Reliab. 51(12): 2402-2411 (2011)
• 
  Daniele Bari, Nicola Wrachien, R. Tagliaferro, Stefano Penna, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester:
  Thermal stress effects on Dye-Sensitized Solar Cells (DSSCs). Microelectron. Reliab. 51(9-11): 1762-1766 (2011)
• 
  Guillaume Bascoul, Philippe Perdu, A. Benigni, Sylvain Dudit, Guillaume Celi, Dean Lewis:
  Time Resolved Imaging: From logical states to events, a new and efficient pattern matching method for VLSI analysis. Microelectron. Reliab. 51(9-11): 1640-1645 (2011)
• 
  Muhammad Bashir, Linda Milor, Dae Hyun Kim, Sung Kyu Lim:
  Impact of irregular geometries on low-k dielectric breakdown. Microelectron. Reliab. 51(9-11): 1582-1586 (2011)

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