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Yasuhiko Ishikawa
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2020 – today
- 2024
- [j5]Koji Abe, Mikiya Kuzutani, Satoki Furuya, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Yasuhiko Ishikawa:
Reduced Peripheral Leakage Current in Pin Photodetectors of Ge on n+-Si by P+ Implantation to Compensate Surface Holes. IEICE Trans. Electron. 107(9): 237-240 (2024) - 2022
- [c5]Junichi Fujikata
, Masataka Noguchi, Tomoki Sakuma, Daisuke Okamoto, Yasuhiko Ishikawa, Shiyoshi Yokoyama:
High Performance Si Photonics Devices and InP/EO Polymer Hybrid Optical Modulator for Data Communication and Computing. OECC/PSC 2022: 1-3 - 2020
- [j4]Mitsuo Fukuda
Feasibility of Plasmonic Circuits in Nanophotonics. IEEE Access 8: 142495-142506 (2020) - [c4]Junichi Fujikata, Masataka Noguchi, Seok-Hwan Jeong, Yosuke Onawa, Daisuke Shimura, Kazuki Kawashita, Riku Katamawari, Hideaki Okayama, Shigeki Takahashi, Hideki Ono, Hiroyuki Takahashi, Hiroki Yaegashi, Yasuhiko Ishikawa, Takahiro Nakamura:
High-Speed and 16 λ-WDM Operation of Ge/Si Electro-Absorption Modulator for C-Band Spectral Regime. OFC 2020: 1-3
2010 – 2019
- 2019
- [c3]Yasuhiko Ishikawa
Ge Epitaxial Layers on Si for Group-IV Integrated Photonics. OECC/PSC 2019: 1-3 - 2014
- [j3]Yasuhiko Ishikawa
Ge-on-Si photonic devices for photonic-electronic integration on a Si platform. IEICE Electron. Express 11(24): 20142008 (2014) - [c2]Tatsurou Hiraki, Hiroshi Fukuda, Tai Tsuchizawa, Rai Kou, Hidetaka Nishi, Kotaro Takeda, Tsuyoshi Yamamoto, Yasuhiko Ishikawa
Monolithic integration of Si-silica waveguide delay line interferometer and germanium photodetectors for 25-Gbit/s DPSK demodulator. OFC 2014: 1-3 - 2013
- [c1]Hidetaka Nishi, Rai Kou, Tatsurou Hiraki, Tai Tsuchizawa, Hiroshi Fukuda, Yasuhiko Ishikawa, Kazumi Wada, Koji Yamada:
22-Gbit/s × 16-ch WDM receiver based on a Si-Ge-silica monolithic photonic platform and its application to 40-km transmission. OFC/NFOEC 2013: 1-3
2000 – 2009
- 2009
- [j2]Kazumi Wada, Sungbong Park, Yasuhiko Ishikawa
Si Photonics and Fiber to the Home. Proc. IEEE 97(7): 1329-1336 (2009) - 2008
- [j1]Sungbong Park, Yasuhiko Ishikawa
Effect of Post-Growth Annealing on Morphology of Ge Mesa Selectively Grown on Si. IEICE Trans. Electron. 91-C(2): 181-186 (2008)
Coauthor Index
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