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Mridula Gupta
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2020 – today
- 2023
- [c8]Ronak Singh, Yogesh Pratap, Mridula Gupta:
Dielectrically Modulated Junctionless Rectangular Gate All Around FET based Biosensor for Label Free detection of Neutral Biomolecules. ICST 2023: 1-6 - 2022
- [j26]Khushwant Sehra
, Vandana Kumari, Poonam Kasturi, Mridula Gupta
Interplay Between γ-Ray Irradiation and 3DEG for Dosimeter Applications. IEEE Access 10: 25811-25827 (2022) - [j25]Neha
Investigation of proton irradiated dual field plate AlGaN/GaN HEMTs: TCAD based assessment. Microelectron. J. 122: 105405 (2022) - [c7]Khushwant Sehra
Implications of Field Plate HEMT Towards Power Performance at Microwave X - Band. VDAT 2022: 65-75 - 2021
- [j24]Anupama Anand
A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width. Microelectron. J. 118: 105258 (2021)
2010 – 2019
- 2019
- [j23]Milan Jain
Beyond Control: Enabling Smart Thermostats for Leakage Detection. Proc. ACM Interact. Mob. Wearable Ubiquitous Technol. 3(1): 14:1-14:21 (2019) - [i1]Milan Jain, Mridula Gupta, Amarjeet Singh, Vikas Chandan:
Beyond Control: Enabling Smart Thermostats For Leakage Detection. CoRR abs/1901.10580 (2019) - 2018
- [c6]Preeti Singh, Vandana Kumari, Manoj Saxena
Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study. VDAT 2018: 380-393 - 2017
- [c5]Ajay Singh, Rakhi Narang
Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor. VDAT 2017: 249-258 - [c4]Rakhi Narang
Improved Gate Modulation in Tunnel Field Effect Transistors with Non-rectangular Tapered Y-Gate Geometry. VDAT 2017: 463-473 - [c3]Vandana Kumari, Manoj Saxena
Variability Investigation of Double Gate JunctionLess (DG-JL) Transistor for Circuit Design Perspective. VDAT 2017: 496-503 - 2015
- [c2]Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta:
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. ICM 2015: 186-189 - 2014
- [j22]Yogesh Pratap
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. Microelectron. J. 45(4): 408-415 (2014) - [j21]Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectron. J. 45(11): 1508-1514 (2014) - [j20]Rajni Gautam
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity. Microelectron. Reliab. 54(1): 37-43 (2014) - 2013
- [j19]Rakhi Narang
Drain current model for a gate all around (GAA) p-n-p-n tunnel FET. Microelectron. J. 44(6): 479-488 (2013) - [j18]Rajni Gautam
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter. Microelectron. Reliab. 53(2): 236-244 (2013) - 2012
- [j17]Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectron. J. 43(1): 17-24 (2012) - [j16]Priyanka Malik, R. S. Gupta, Rishu Chaujar
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectron. Reliab. 52(1): 151-158 (2012) - [j15]Vandana Kumari, Manoj Saxena
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectron. Reliab. 52(6): 974-983 (2012) - [j14]Rajni Gautam
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. Microelectron. Reliab. 52(6): 989-994 (2012) - [j13]Vandana Kumari, Manoj Saxena
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. Microelectron. Reliab. 52(8): 1610-1612 (2012) - [j12]Rakhi Narang
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. Microelectron. Reliab. 52(8): 1617-1620 (2012) - [c1]Neha Verma, Jyotika Jogi, Mridula Gupta, R. S. Gupta:
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT. UKSim 2012: 660-664 - 2011
- [j11]Sona P. Kumar, Anju Agrawal, Rishu Chaujar
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectron. Reliab. 51(3): 587-596 (2011)
2000 – 2009
- 2009
- [j10]Rupendra Kumar Sharma
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. Microelectron. Reliab. 49(7): 699-706 (2009) - [j9]Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta:
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. Microelectron. Reliab. 49(12): 1508-1514 (2009) - 2008
- [j8]Sona P. Kumar, Anju Agrawal, Rishu Chaujar
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. Microelectron. J. 39(12): 1416-1424 (2008) - 2007
- [j7]Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectron. J. 38(4-5): 547-555 (2007) - [j6]Parvesh Gangwani, Sujata Pandey
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectron. J. 38(8-9): 848-854 (2007) - [j5]Sona P. Kumar, Anju Agrawal, Rishu Chaujar
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. Microelectron. J. 38(10-11): 1013-1020 (2007) - 2006
- [j4]Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectron. J. 37(7): 620-626 (2006) - [j3]Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta:
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability. Microelectron. J. 37(9): 919-929 (2006) - [j2]Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta:
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. Microelectron. J. 37(11): 1339-1346 (2006) - 2003
- [j1]N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta:
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor. Microelectron. J. 34(1): 77-83 (2003)
Coauthor Index
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