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Wim Schoenmaker
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2010 – 2019
- 2018
- [j15]Nicodemus Banagaaya
, Peter Benner, Lihong Feng, Peter Meuris, Wim Schoenmaker:
An index-aware parametric model order reduction method for parameterized quadratic differential-algebraic equations. Appl. Math. Comput. 319: 409-424 (2018) - 2017
- [j14]Philippe Galy, Wim Schoenmaker
Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology. Microelectron. Reliab. 76-77: 680-684 (2017) - [c8]Kai Bittner, Hans Georg Brachtendorf, Wim Schoenmaker, Pascal Reynier:
Coupled circuit/EM simulation for radio frequency circuits. DAC 2017: 10:1-10:6 - 2016
- [j13]Quan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong:
A fast time-domain EM-TCAD coupled simulation framework via matrix exponential with stiffness reduction. Int. J. Circuit Theory Appl. 44(4): 833-850 (2016) - [j12]Qinggao Mei, Wim Schoenmaker, Shih-Hung Weng, Hao Zhuang, Chung-Kuan Cheng, Quan Chen:
An Efficient Transient Electro-Thermal Simulation Framework for Power Integrated Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35(5): 832-843 (2016) - [c7]Wim Schoenmaker, Peter Meuris, Christian Strohm, Caren Tischendorf:
Holistic coupled field and circuit simulation. DATE 2016: 307-312 - [c6]Nicodemus Banagaaya, Lihong Feng, Wim Schoenmaker, Peter Meuris, Aarnout Wieers, Renaud Gillon, Peter Benner:
Model Order Reduction for nanoelectronics coupled problems with many inputs. DATE 2016: 313-318 - [c5]Piotr Putek, Peter Meuris, Roland Pulch, E. Jan W. ter Maten, Michael Gunther, Wim Schoenmaker, Frederik Deleu, Aarnout Wieers:
Shape optimization of a power MOS device under uncertainties. DATE 2016: 319-324 - [c4]Quan Chen, Wim Schoenmaker:
A new tightly-coupled transient electro-thermal simulation method for power electronics. ICCAD 2016: 16 - 2015
- [j11]Philippe Galy, Wim Schoenmaker:
Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes. Microelectron. Reliab. 55(9-10): 1532-1536 (2015) - [c3]Wim Schoenmaker, Philippe Galy:
Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices. ICICDT 2015: 1-4 - 2014
- [j10]Wim Schoenmaker
Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 33(6): 893-902 (2014) - 2013
- [j9]Quan Chen, Wim Schoenmaker, Guan-Hua Chen, Lijun Jiang, Ngai Wong:
A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient Systems. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 32(5): 802-806 (2013) - 2012
- [c2]Wim Schoenmaker, Michael Matthes, Bart De Smedt, Sascha Baumanns, Caren Tischendorf
Large signal simulation of integrated inductors on semi-conducting substrates. DATE 2012: 1221-1226 - [c1]Quan Chen, Wim Schoenmaker
A fast time-domain EM-TCAD coupled simulation framework via matrix exponential. ICCAD 2012: 422-428 - 2011
- [j8]Quan Chen, Wim Schoenmaker
An Effective Formulation of Coupled Electromagnetic-TCAD Simulation for Extremely High Frequency Onward. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30(6): 866-876 (2011)
2000 – 2009
- 2002
- [j7]Wim Schoenmaker, Peter Meuris:
Electromagnetic interconnects and passives modeling: softwareimplementation issues. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21(5): 534-543 (2002) - [j6]Wim Schoenmaker, Wim Magnus, Peter Meuris, Bert Maleszka:
Renormalization group meshes and the discretization of TCAD equations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21(12): 1425-1433 (2002) - 2001
- [j5]Wim Magnus, Wim Schoenmaker:
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors. Microelectron. Reliab. 41(1): 31-35 (2001) - [j4]Peter Meuris, Wim Schoenmaker, Wim Magnus:
Strategy for electromagnetic interconnect modeling. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 20(6): 753-762 (2001) - [j3]K. G. Rajendran, Wim Schoenmaker:
Measurement and Simulation of Boron Diffusivity in Strained Si1 -xGex Epitaxial Layers. VLSI Design 13(1-4): 317-321 (2001)
1990 – 1999
- 1993
- [j2]Rudi C. Vankemmel, Wim Schoenmaker, Rudi Cartuyvels, Kristin M. De Meyer:
Scaling considerations of the constitutive equations in a 2-D finite element heterojunction simulator PRISM. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11): 1786-1797 (1993) - 1990
- [j1]Philippe Jansen, N. Maene, Walter De Raedt, S. Naten, D. Stubbe, Wim Schoenmaker, M. Van Rossum, Kristin M. De Meyer:
AlGaAs/GaAs: High electron mobility transistor simulations with PRISM. Eur. Trans. Telecommun. 1(4): 433-437 (1990)
Coauthor Index
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