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Kuei-Shu Chang-Liao
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Journal Articles
- 2022
- [j9]Pradhana Jati Budhi Laksana
, Li-Chu Tsai, Chang-Cheng Lin, Kuei-Shu Chang-Liao, Mathew K. Moodley, Chii-Dong Chen:
Opto Field-Effect Transistors for Detecting Quercetin-Cu2+ Complex. Sensors 22(19): 7219 (2022) - 2018
- [j8]Hsin-Kai Fang, Kuei-Shu Chang-Liao
SiO2 tunneling and Si3N4/HfO2 trapping layers formed with low temperature processes on gate-all-around junctionless charge-trapping flash memory devices. Microelectron. Reliab. 91: 319-322 (2018) - 2017
- [j7]Chan-Ching Lin, Kuei-Shu Chang-Liao
A new erase method for scaled NAND flash memory device. Microelectron. Reliab. 72: 34-38 (2017) - [j6]Yan-Lin Li, Kuei-Shu Chang-Liao, Yu-Wei Chang, Tse-Jung Huang, Chen-Chien Li, Zhao-Chen Gu, Po-Yen Chen, Tzung-Yu Wu, Jiayi Huang, Fu-Chuan Chu, Shih-Han Yi:
Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer. Microelectron. Reliab. 79: 136-139 (2017) - 2015
- [j5]Hao-Chieh Lee, Kuei-Shu Chang-Liao, Yan-Lin Li:
Improved reliability of large-sized a-Si thin-film-transistor by back channel treatment in H2. Microelectron. Reliab. 55(11): 2178-2182 (2015) - [j4]Wei-Fong Chi, Kuei-Shu Chang-Liao, Shih-Han Yi, Chen-Chien Li, Yan-Lin Li:
Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature. Microelectron. Reliab. 55(11): 2183-2187 (2015) - 2011
- [j3]Chun-Chang Lu, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Shih-Cheng Chang, Tien-Ko Wang, Fu-Chung Hou, Yao-Tung Hsu:
Tunneling component suppression in charge pumping measurement and reliability study for high-k gated MOSFETs. Microelectron. Reliab. 51(12): 2110-2114 (2011) - 2009
- [j2]Chia-Huai Ho, Kuei-Shu Chang-Liao, Chun-Yuan Lu, Chun-Chang Lu, Tien-Ko Wang:
Employing vertical dielectric layers to improve the operation performance of flash memory devices. Microelectron. Reliab. 49(4): 371-376 (2009) - 2007
- [j1]Chia-Huai Ho, Kuei-Shu Chang-Liao, Ya-Nan Huang, Tien-Ko Wang, T. C. Lu:
Performance and reliability improvement of flash device by a novel programming method. Microelectron. Reliab. 47(6): 967-971 (2007)
Coauthor Index
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