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Joel Molina Reyes

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affiliation: Instituto Nacional de Astrofisica Optica y Electronica, Optics and Electronics, Puebla, Mexico

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2010 – 2019

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2019
[c5]
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  - conf/irps/AguirrePRRVMPDR19
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Fernando Leonel Aguirre, Andrea Padovani, Alok Ranjan, Nagarajan Raghavan, Nahuel Vega, Nahuel Muller, Sebastián Matías Pazos, Mario Debray, Joel Molina Reyes, Kin Leong Pey, Felix Palumbo:
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms. IRPS 2019: 1-8
2018
[c4]
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  - conf/drc/Molina-ReyesU18
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Joel Molina Reyes, H. Uribe-Vargas:
Room temperature resonant tunneling in metal-insulator-insulator-insulator-semiconductor devices. DRC 2018: 1-2
2017
[j5]
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  - journals/complexity/ReyesH17
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Joel Molina Reyes, Luis Hernández-Martínez:
Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments. Complex. 2017: 8263904:1-8263904:10 (2017)
2016
[j4]
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Alok Ranjan, Nagarajan Raghavan, Joel Molina Reyes, Sean J. O'Shea, Kalya Shubhakar, Kin Leong Pey:
Analysis of quantum conductance, read disturb and switching statistics in HfO₂ RRAM using conductive AFM. Microelectron. Reliab. 64: 172-178 (2016)
2015
[c3]
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  - conf/mwscas/Carrillo-Martinez15
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Luis Antonio Carrillo-Martínez, Guillermo Espinosa Flores-Verdad, Joel Molina Reyes, Berni M. Perez:
A smart transduction system with PVTA compensation for sensing applications. MWSCAS 2015: 1-4
2014
[j3]
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  - journals/mr/ReyesVZRATHG14
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Joel Molina Reyes, Rene Valderrama, Carlos Zuniga, Pedro Rosales, Wilfrido Calleja Arriaga, Alfonso Torres-Jácome, Francisco Javier de la Hidalga Wade, Edmundo A. Gutiérrez-D.:
Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al₂O₃/Al and Al/Al₂O₃/W structures fabricated on glass at 300 °C. Microelectron. Reliab. 54(12): 2747-2753 (2014)
[c2]
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A. Erika Pondigo de los, Edmundo A. Gutiérrez-D., Joel Molina Reyes, Fernando Guarin:
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs. ESSDERC 2014: 90-93
2013
[c1]
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  - conf/iceee/AlvarezAAR13
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Carlos Ramón Báez Álvarez, Mónico Linares Aranda, Wilfrido Calleja Arriaga, Joel Molina Reyes:
Effect of changing the material and device's properties on the performance of polysilicon-based MicroActuators. CCE 2013: 415-420

2000 – 2009

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2007
[j2]
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Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai:
Carrier separation and Vth measurements of W-La₂O₃ gated MOSFET structures after electrical stress. IEICE Electron. Express 4(6): 185-191 (2007)
2005
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Enrique Miranda, Joel Molina Reyes, Y. Kim, Hiroshi Iwai:
Degradation of high-K LA₂O₃ gate dielectrics using progressive electrical stress. Microelectron. Reliab. 45(9-11): 1365-1369 (2005)

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