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Kang-Lung Wang

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2010 – 2019

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2018
[j3]
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Albert Lee, Hochul Lee, Farbod Ebrahimi, Bonnie Lam, Wei-Hao Chen, Meng-Fan Chang, Pedram Khalili Amiri, Kang-Lung Wang:
A Dual-Data Line Read Scheme for High-Speed Low-Energy Resistive Nonvolatile Memories. IEEE Trans. Very Large Scale Integr. Syst. 26(2): 272-279 (2018)
2017
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Albert Lee, Chieh-Pu Lo, Chien-Chen Lin, Wei-Hao Chen, Kuo-Hsiang Hsu, Zhibo Wang, Fang Su, Zhe Yuan, Qi Wei, Ya-Chin King, Chrong Jung Lin, Hochul Lee, Pedram Khalili Amiri, Kang-Lung Wang, Yu Wang, Huazhong Yang, Yongpan Liu, Meng-Fan Chang:
A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors. IEEE J. Solid State Circuits 52(8): 2194-2207 (2017)
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Zhibo Wang, Yongpan Liu, Albert Lee, Fang Su, Chieh-Pu Lo, Zhe Yuan, Jinyang Li, Chien-Chen Lin, Wei-Hao Chen, Hsiao-Yun Chiu, Wei-En Lin, Ya-Chin King, Chrong Jung Lin, Pedram Khalili Amiri, Kang-Lung Wang, Meng-Fan Chang, Huazhong Yang:
A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving > 4× Faster Clock Frequency and > 6× Higher Restore Speed. IEEE J. Solid State Circuits 52(10): 2769-2785 (2017)
2016
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Yongpan Liu, Zhibo Wang, Albert Lee, Fang Su, Chieh-Pu Lo, Zhe Yuan, Chien-Chen Lin, Qi Wei, Yu Wang, Ya-Chin King, Chrong Jung Lin, Pedram Khalili, Kang-Lung Wang, Meng-Fan Chang, Huazhong Yang:
4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic. ISSCC 2016: 84-86

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