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"High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed ..."

Pouya Hashemi et al. (2015)

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DOI: 10.1109/VLSIC.2015.7231382

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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Pouya Hashemi, Takashi Ando, Karthik Balakrishnan, John Bruley, Sebastian U. Engelmann, John A. Ott, Vijay Narayanan, D.-G. Park, Renee T. Mo, Effendi Leobandung:
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. VLSIC 2015: 16-

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