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"Improved reverse recovery characteristics obtained in 4H-SiC double-trench ..."

Siva Kotamraju, Pavan Vudumula (2020)

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DOI: 10.1049/IET-CDS.2020.0315

access: closed

type: Journal Article

metadata version: 2021-01-26

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  - journals/iet-cds/KotamrajuV20
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  - https://dblp.org/rec/journals/iet-cds/KotamrajuV20
Siva Kotamraju, Pavan Vudumula:
Improved reverse recovery characteristics obtained in 4H-SiC double-trench superjunction MOSFET with an integrated p-type Schottky diode. IET Circuits Devices Syst. 14(8): 1283-1288 (2020)

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