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ESSDERC 2013: Bucharest, Romania
- Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. IEEE 2013
- Reinhard Ploss:
Automotive electronics and energy efficiency. 1-2
A2L-A JOINT PLENARY: W. Maszara (Global Foundries)
- Witold P. Maszara, M.-R. Lin:
FinFETs - Technology and circuit design challenges. 3-8
B2L-A JOINT PLENARY: S. Finkbeiner (Bosch)
- Stefan Finkbeiner:
MEMS for automotive and consumer electronics. 9-14
C1L-A JOINT PLENARY: M. Maharbiz (UC, Berkeley)
- Timothy J. Blanche, Joshua Paul van Kleef
, Peter Ledochowitsch, Travis L. Massey, Rikky Muller, Dongjin Seo, Michel M. Maharbiz:
Cyborg insects, neural dust and other things: Building interfaces between the synthetic and the multicellular. 15
C2L-A JOINT PLENARY: J. del Alamo (MIT)
- Jesús A. del Alamo:
Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies. 16-21
A4L-E ESSDERC Keynote: T. Kimoto (Kyoto Univ.)
- Tsunenobu Kimoto:
Ultrahigh-voltage SiC devices for future power infrastructure. 22-29
B3L-E ESSDERC Keynote: L. Baldi (Micron)
- Livio Baldi, Gurtej Sandhu:
Emerging memories. 30-36 - Wei Cao, Jiahao Kang
2D electronics: Graphene and beyond. 37-44
A3L-A Emerging FET Devices
- Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo
Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. 45-48 - Alberto Revelant, Pierpaolo Palestri, Patrik Osgnach, Daniel Lizzit
On the optimization of SiGe and III-V compound hetero-junction Tunnel FET devices. 49-52 - Sofia Johansson, Jiongjiong Mo, Erik Lind
Characterization of border traps in III-V MOSFETs using an RF transconductance method. 53-56
A3L-C GaN and NEMS
- Alain Agboton, Nicolas Defrance, Phillipe Altuntas, Vannessa Avramovic, Adrien Cutivet, Rezky Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Hassan Maher, Michel Renvoise, Peter Frijlink:
Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. 57-60 - Davide Bisi
Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. 61-64 - Olivier Martin, Éric Colinet, Eric Sage, Cecilia Dupre, Patrick Villard, Sebastien Hentz
Impact of process variability on a frequency-addressed NEMS array sensor used for gravimetric detection. 65-68
A3L-F Emerging FET-like Modeling
- Emanuele Baravelli, Elena Gnani
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. 69-72 - Giovanni Betti Beneventi
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. 73-76 - Áron Szabó, Mathieu Luisier:
Full-band simulation of p-type ultra-scaled silicon nanowire transistors. 77-80 - Pasquale Maiorano, Elena Gnani
Gate stack optimization to minimize power consumption in super-lattice fets. 81-84
A5L-E ESSDERC Invited Session I
- Georg S. Duesberg
Investigation of carbon-silicon schottky diodes and their use as chemical sensors. 85-90 - Susanna Reggiani
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). 91-94
A6L-E Technologies and Devices for RF and Power Applications
- Timo Zawischka, Martin Pfost, Michael Ebli, Dragos Costachescu:
An experimental study of integrated DMOS transistors with increased energy capability. 95-98 - Panagiotis Sarafis, Emmanouel Hourdakis, Androula G. Nassiopoulou:
Porous Si dielectric parameter extraction for use in RF passive device integration: Measurements and simulations. 99-102 - Mihaela Alexandru, Viorel Banu
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. 103-106 - Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. 107-110 - Vasileios Papageorgiou, Ata H. Khalid
Monolithic fabrication of a planar Gunn diode and a pHEMT side-by-side. 111-114 - Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs. 115-118
A6L-F Optoelectronic and Photonic devices
- Giulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz
Role of junction depth in light emission from silicon p-i-n leds. 119-122 - Graciele Batistell, Johannes Sturm
Filter-less color sensor in standard CMOS technology. 123-126 - Andre Wachowiak, Stefan Slesazeck, Paul Jordan, Jürgen Holz, Thomas Mikolajick
New color sensor concept based on single spectral tunable photodiode. 127-130 - Naser Sedghi
Towards rectennas for solar energy harvesting. 131-134 - Waqas Ahmad, Markus Törmänen, Henrik Sjöland
Photodiodes in deep submicron CMOS process for fully integrated optical receivers. 135-138
B4L-A Emerging Devices
- SangHyeon Kim, Masafumi Yokoyama, Yuki Ikku, Ryosho Nakane
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs. 139-142 - Lukas Czornomaz, Nicolas Daix, Pranita Kerber, Kevin Lister, Daniele Caimi, Christophe Rossel, Marilyne Sousa, Emanuele Uccelli, Jean Fompeyrine:
Scalability of ultra-thin-body and BOX InGaAs MOSFETs on silicon. 143-146 - Benoit Voisin, Benoit Roche, Eva Dupont-Ferrier, Benoit Sklénard, Manuel Cobian, Xavier Jehl, Olga Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer:
The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire. 147-150
B4L-B Processing & Integration
- Ionut Radu
Novel low temperature 3D wafer stacking technology for high density device integration. 151-154 - Eugenio Dentoni Litta
Mobility enhancement by integration of TmSiO IL in 0.65nm EOT high-k/metal gate MOSFETs. 155-158 - Doyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, An De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha:
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. 159-162 - Gennadi Bersuker, Brian Butcher, David Gilmer, Paul Kirsch, Luca Larcher
Connecting RRAM performance to the properties of the hafnia-based dielectrics. 163-165 - Francesco Maria Puglisi
Random telegraph noise analysis to investigate the properties of active traps of HfO2-based RRAM in HRS. 166-169 - Boubacar Traore
On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. 170-173 - Yoshifumi Nishi, Sebastian Schmelzer, Ulrich Böttger, Rainer Waser:
Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin films. 174-177 - Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang:
A two-step set operation for highly uniform resistive swtiching ReRAM by controllable filament. 178-181
B4L-D Reliability Aspects from Device to Circuit I
- Min Chen, Vijay Reddy, Srikanth Krishnan, Jay Ondrusek, Yu Cao
ACE: A robust variability and aging sensor for high-k/metal gate SoC. 182-185 - Jie Ding, Dave Reid, Campbell Millar, Asen Asenov:
Investigation of SRAM using BTI-aware statistical compact models. 186-189 - Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. 190-193
B5L-A Si-based Devices
- Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre
Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. 194-197 - Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo:
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. 198-201 - Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo
Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. 202-205
B5L-B Silicon Doping
- Stéphane Koffel
On the strain induced by arsenic into silicon. 206-209 - Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver:
High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers. 210-213 - Moritz Hackenberg, Mathias Rommel
Melt depth and time variations during pulsed laser thermal annealing with one and more pulses. 214-217
B5L-D Reliability Aspects from Device to Circuit II
- Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont:
Effect of ions presence in the SiOCH inter metal dielectric structure. 218-221 - Yohann Solaro, Pascal Fonteneau, Charles-Alexandre Legrand, Claire Fenouillet-Béranger, Philippe Ferrari, Sorin Cristoloveanu:
Novel back-biased UTBB lateral SCR for FDSOI ESD protections. 222-225 - Marius Bazu, Virgil Emil Ilian, Dragos Varsescu, Lucian Galateanu, Vili Sikio, Meelis Reimets, Volker Uhl, Manuel Weiss:
Reliability tests for discriminating between technological variants of QFN packaging. 226-229
B6L-A Emerging MOS: Variability & Defects
- Vihar P. Georgiev
Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. 230-233 - Xingsheng Wang
Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability. 234-237 - Navid Paydavosi, Sriramkumar Venugopalan, Angada B. Sachid, Ali M. Niknejad, Chenming Hu, Sagnik Dey, Samuel Martin, Xin Zhang:
Flicker noise in advanced CMOS technology: Effects of halo implant. 238-241 - Viktoryia Uhnevionak, Christian Strenger, Alexander Burenkov, V. Mortet, Elena Bedel-Pereira, Jürgen Lorenz
Characterization of n-channel MOSFETs: Electrical measurements and simulation analysis. 242-245
B6L-B Nanowire Electronics
- Walter M. Weber, Jens Trommer
Reconfigurable nanowire electronics - Device principles and circuit prospects. 246-251 - Philipp Mensch, Siegfried F. Karg, Bernd Gotsmann
Electrical and thermoelectrical properties of gated InAs nanowires. 252-255 - Simon Richter, Svetlana A. Vitusevich
Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. 256-259
B6L-C Emerging Memories II
- Tony Schenk, Stefan Mueller, Uwe Schroeder
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. 260-263 - Giorgio Palma, Elisa Vianello, Olivier Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, Catherine Carabasse, Gabriel Molas, Barbara De Salvo:
A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications. 264-267 - Laurent Dellmann, Abu Sebastian
Nonvolatile resistive memory devices based on hydrogenated amorphous carbon. 268-271
B6L-C Emerging Memories II
- Ryosho Nakane
Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service. 272-275 - Markus Becherer
Nanomagnetic logic clocked in the MHz regime. 276-279 - Radu A. Sporea, Abdullah S. Alshammari, Stamatis Georgakopoulos
Micron-scale inkjet-assisted digital lithography for large-area flexible electronics. 280-283
C3L-B MEMS Devices and Technologies I
- Anh-Tuan Do, Karthik G. Jayaraman, Pushpapraj Singh, Chua Geng Li, Kiat Seng Yeo
Design and array implementation a cantilever-based non-volatile memory utilizing vibrational reset. 284-287 - Wolfgang A. Vitale, Montserrat Fernandez-Bolaños, Antonios Bazigos
RF MEMS power sensors for ultra-low power wake-up circuit applications. 288-291 - Alfons Dehe, Martin Wurzer, Marc Fuldner, Ulrich Krumbein:
Design of a poly silicon MEMS microphone for high signal-to-noise ratio. 292-295
C3L-D Advanced Characterization of Novel MOS FET Structures
- Sung-Jae Chang, Sorin Cristoloveanu, Maryline Bawedin, Jong-Hyun Lee, Jung-Hee Lee, Sutirtha Mukhopadhyay, Benjamin A. Piot:
Magnetoresistance measurements and unusual mobilitiy behavior in FD MOSFETs. 296-299 - Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo
Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. 300-303 - Carlos Navarro
Why are SCE overestimated in FD-SOI MOSFETs? 304-307
C5L-E ESSDERC Invited Session II
- Mathieu Luisier, Reto Rhyner:
Atomistic simulation of electron and phonon transport in nano-devices. 308-313
C6L-D Carbon-based Devices
- Valerio Di Lecce, Roberto Grassi, Antonio Gnudi
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. 314-317 - Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band. 318-321 - Mircea Dragoman, Adrian Dinescu
On-wafer graphene diodes for high-frequency applications. 322-325 - Hoel Guerin, Helene Le Poche, Roland Pohle, Montserrat Fernandez-Bolaños, Jean Dijon, Adrian M. Ionescu:
Carbon nanotube resistors as gas sensors: Towards selective analyte detection with various metal-nanotubeinterfaces. 326-329
C6L-E Emerging Memory Modeling
- Victor Vega-Gonzalez, Edmundo Gutierrez-Dominguez
A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k. 330-333 - Dmitry Osintsev, Viktor Sverdlov
Reduction of momentum and spin relaxation rate in strained thin silicon films. 334-337 - Zihan Xu, Ketul Sutaria, Chengen Yang, Chaitali Chakrabarti, Yu Cao
Compact modeling of STT-MTJ for SPICE simulation. 338-341 - Tsanka Z. Todorova, Philippe Blaise, Elisa Vianello, Leonardo R. C. Fonseca:
Understanding the conduction mechanism of the chalcogenide Ag2S silver-doped through ab initio simulation. 342-345 - Giuliano Marcolini, Fabio Giovanardi, Massimo Rudan, Fabrizio Buscemi, Enrico Piccinini, Rossella Brunetti
Modeling the dynamic self-heating of PCM. 346-349
C6L-F MEMS Devices and Technologies II
- Sara Rigante, Paolo Livi, Mathias Wipf
Low power finfet ph-sensor with high-sensitivity voltage readout. 350-353 - Evangelos Skotadis
Flexible platinum nanoparticle strain sensors. 354-357 - Victor Moagar-Poladian, Gabriel Moagar-Poladian:
MEMS sensors for high voltage lines. 358-361 - Niko Münzenrieder
Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm. 362-365
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