An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation. - Khan, Saqib A.; Lim, Chul Seung; Bak, GeunYong; Baeg, Sanghyeon; Lee, Soonyoung (Microelectron. Reliab., 2017)

Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation. - Khan, Saqib A.; Wen, Shi-Jie; Baeg, Sanghyeon (IEICE Electron. Express, 2016)

Erratum: Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation [IEICE Electronics Express Vol. 13 (2016) No. 17 pp. 20160627]. - Khan, Saqib A.; Wen, Shi-Jie; Baeg, Sanghyeon (IEICE Electron. Express, 2016)