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Werner Brockherde
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2010 – 2019
- 2018
- [c20]Maik Beer, Charles Thattil, Jan F. Haase, Werner Brockherde, Rainer Kokozinski
:
2×192 Pixel CMOS SPAD-Based Flash LiDAR Sensor with Adjustable Background Rejection. ICECS 2018: 17-20 - 2017
- [c19]Maik Beer, Bedrich J. Hosticka, Olaf M. Schrey, Werner Brockherde
Range accuracy of SPAD-based time-of-flight sensors. ECCTD 2017: 1-4 - [c18]Maik Beer, Olaf M. Schrey, Christian Nitta, Werner Brockherde, Bedrich J. Hosticka, Rainer Kokozinski
1×80 pixel SPAD-based flash LIDAR sensor with background rejection based on photon coincidence. IEEE SENSORS 2017: 1-3 - 2015
- [c17]Werner Brockherde, Benjamin Bechen, Ernst Bodenstorfer, Jörg Brodersen, Konrad J. Mayer, Christian Nitta, Olaf Schrey:
A multi-functional 200, 000 lines/s tri-linear RGB line-scan sensor. ESSDERC 2015: 189 - 2013
- [c16]Andreas Süss, Christian Nitta, Andreas Spickermann, Daniel Durini
Speed considerations for LDPD based time-of-flight CMOS 3D image sensors. ESSCIRC 2013: 299-302 - 2012
- [c15]Danilo Bronzi, Federica A. Villa
Low-noise and large-area CMOS SPADs with timing response free from slow tails. ESSDERC 2012: 230-233 - 2011
- [c14]Frank Matheis, Werner Brockherde, Anton Grabmaier
Modeling and calibration of 3D-Time-of-Flight pulse-modulated image sensors. ECCTD 2011: 417-420 - [c13]Andreas Spickermann, Daniel Durini
CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels. ESSCIRC 2011: 111-114 - 2010
- [c12]Daniel Durini
Large full-well capacity stitched CMOS image sensor for high temperature applications. ESSCIRC 2010: 130-133
2000 – 2009
- 2009
- [j9]Daniel Durini
Charge-injection photogate pixel fabricated in CMOS silicon-on-insulator technology. Int. J. Circuit Theory Appl. 37(2): 179-192 (2009) - [c11]Daniel Durini
Double modified internal gate (MIG) pixel for fluorescence imaging applications. ECCTD 2009: 9-12 - [c10]Andreas Spickermann, Daniel Durini
Pulsed time-of-flight 3D-CMOS imaging using photogate-based active pixel sensors. ESSCIRC 2009: 200-203 - 2008
- [j8]Daniel Durini
Time-of-Flight 3-D Imaging Pixel Structures in Standard CMOS Processes. IEEE J. Solid State Circuits 43(7): 1594-1602 (2008) - [c9]Daniel Durini
Highly sensitive UV-enhanced linear CMOS photosensor. ESSCIRC 2008: 118-121 - 2007
- [c8]Daniel Durini
SOI pixel detector based on CMOS time-compression charge-injection. ECCTD 2007: 946-949 - [c7]Daniel Durini
MOS-Capacitor based CMOS time-compression photogate pixel for time-of-flight imaging. ESSCIRC 2007: 340-343 - 2004
- [j7]Ingo Hehemann, Werner Brockherde
A single-chip optical CMOS detector with in-situ demodulating and integrating readout for next-generation optical storage systems. IEEE J. Solid State Circuits 39(4): 629-635 (2004) - [j6]Roger Steadman, Francisco Morales Serrano, Gereon Vogtmeier, Armin Kemna, Erol Oezkan, Werner Brockherde
A CMOS photodiode array with in-pixel data acquisition system for computed tomography. IEEE J. Solid State Circuits 39(7): 1034-1043 (2004) - [j5]O. Elkhalili, Olaf M. Schrey, Peter Mengel, M. Petermann, Werner Brockherde
A 4×64 pixel CMOS image sensor for 3-D measurement applications. IEEE J. Solid State Circuits 39(7): 1208-1212 (2004) - [c6]Werner Brockherde, Arndt Bußmann, Christian Nitta, Bedrich J. Hosticka, Reiner K. Wertheimer:
High-sensitivity, high-dynamic range 768 × 576 pixel CMOS image sensor. ESSCIRC 2004: 411-414 - 2003
- [c5]Roger Steadman, Armin Kemna, Francisco Morales Serrano, Gereon Vogtmeier, Erol Özkan, Werner Brockherde
A CMOS photodiode array with in-pixel data acquisition system. ESSCIRC 2003: 117-120 - [c4]Olaf M. Schrey, O. Elkhalili, Peter Mengel, M. Petermann, Werner Brockherde
A 4×64 pixel CMOS image sensor for 3D measurement applications. ESSCIRC 2003: 333-336 - 2002
- [j4]Olaf Schrey, Jürgen Huppertz, Goran Filimonovic, Arndt Bußmann, Werner Brockherde
A 1 K×1 K high dynamic range CMOS image sensor with on-chip programmable region-of-interest readout. IEEE J. Solid State Circuits 37(7): 911-915 (2002) - [c3]Ingo Hehemann, Werner Brockherde
A new detector architecture for optical pickup units in DVD systems. ISCAS (4) 2002: 41-44
1990 – 1999
- 1998
- [j3]Amer Aslam-Siddiqi, Werner Brockherde
A 128-pixel CMOS image sensor with integrated analog nonvolatile memory. IEEE J. Solid State Circuits 33(10): 1497-1501 (1998) - [j2]Amer Aslam-Siddiqi, Werner Brockherde
A 16×16 nonvolatile programmable analog vector-matrix multiplier. IEEE J. Solid State Circuits 33(10): 1502-1509 (1998) - 1994
- [j1]A. Sprotte, K. Buckhorst, Werner Brockherde
CMOS magnetic-field sensor system. IEEE J. Solid State Circuits 29(8): 1002-1005 (1994) - [c2]V. Uhlemann, Bedrich J. Hosticka, Werner Brockherde
Interlaced Sampling for Noise Reduction. ISCAS 1994: 425-428 - 1990
- [c1]Klaus Hoffmann, Michael Mertens, Klaus Milzner, Werner Brockherde, Günther Hess, Roland Klinke, Florian Frohm:
OASE: A Knowledge Based Environment for Analog Circuit Design. Rechnergestützter Entwurf und Architektur mikroelektronischer Systeme 1990: 157-168
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