A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching - Patrick Waltereit; Marina Preschle; Stefan Müller; Lutz Kirste; Heiko Czap; Joachim Ruster; Michael Dammann; Richard Reiner (76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018, 2018)