First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures - Cheng-Lin Sung; Sheng-Ting Fan; Hang-Ting Lue; Wei-Chen Chen; Pei-Ying Du; Teng-Hao Yeh; Keh-Chung Wang; Chih-Yuan Lu (IEEE International Reliability Physics Symposium, IRPS 2022, Dallas, TX, USA, March 27-31, 2022, 2022)

Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances - Hang-Ting Lue; Tzu-Hsuan Hsu; Cheng-Lin Sung; Teng-Hao Yeh; Keh-Chung Wang; Chih-Yuan Lu (IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021, 2021)

Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution - Chieh Roger Lo; Teng-Hao Yeh; Wei-Chen Chen; Hang-Ting Lue; Keh-Chung Wang; Chih-Yuan Lu; Yao-Wen Chang; Yung-Hsiang Chen; Chu-Yung Liu (2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020, 2020)