First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures. - Sung, Cheng-Lin; Fan, Sheng-Ting; Lue, Hang-Ting; Chen, Wei-Chen; Du, Pei-Ying; Yeh, Teng-Hao; Wang, Keh-Chung; Lu, Chih-Yuan (2022)

Write-In-Place Operation and It's Advantages to Upgrade the 3D AND-type Flash Memory Performances. - Lue, Hang-Ting; Hsu, Tzu-Hsuan; Sung, Cheng-Lin; Yeh, Teng-Hao; Wang, Keh-Chung; Lu, Chih-Yuan (2021)

Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution. - Lo, Chieh Roger; Yeh, Teng-Hao; Chen, Wei-Chen; Lue, Hang-Ting; Wang, Keh-Chung; Lu, Chih-Yuan; Chang, Yao-Wen; Chen, Yung-Hsiang; Liu, Chu-Yung (2020)