A 126.6-mm2 AND-type 512-Mb flash memory with 1.8-V power supply. - Ishii, Tatsuya; Oshima, Kazuyoshi; Sato, Hiroshi; Noda, Satoshi; Kishimoto, Jiro; Kotani, Hiroaki; Nozoe, Atsushi; Furusawa, Kazunori; Yoshitake, Takayuki; Kato, Masataka; Takahashi, Masahito; Sato, Akihiko; et al. (IEEE J. Solid State Circuits, 2001)

A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications. - Nozoe, Atsushi; Kotani, Hiroaki; Tsujikawa, Tetsuya; Yoshida, Keiichi; Furusawa, Kazunori; Kato, Masataka; Nishimoto, Toshiaki; Kume, Hitoshi; Kurata, Hideaki; Miyamoto, Naoki; Kubono, Shoji; Kanamitsu, Michitaro; et al. (IEEE J. Solid State Circuits, 1999)

Dual-regulator dual-decoding-trimmer DRAM voltage limiter for burn-in test. - Horiguchi, Masashi; Aoki, Masakazu; Etoh, Jun; Itoh, Gyoo; Kajigaya, Kazuhiko; Nozoe, Atsushi; Matsumoto, Tetsuro (IEEE J. Solid State Circuits, 1991)