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Zixuan Sun
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2020 – today
- 2024
- [j2]Jiahao Song
, Xiyuan Tang
A 4-bit Calibration-Free Computing-In-Memory Macro With 3T1C Current-Programed Dynamic-Cascode Multi-Level-Cell eDRAM. IEEE J. Solid State Circuits 59(3): 842-854 (2024) - [j1]Zixuan Sun
OS3Flow: Optical and SAR Image Registration Using Symmetry-Guided Semi-Dense Optical Flow. IEEE Geosci. Remote. Sens. Lett. 21: 1-5 (2024) - [c11]Hao Zhang, Zixuan Sun, Yuhui Zheng, Kaihua Zhang, Gang Dong, Lingyan Liang, Yaqian Zhao:
Glance, Focus and Refinement Network for Remote Sensing Change Detection. ICASSP 2024: 3245-3249 - [c10]Zixuan Sun, Huihui Song, Kaihua Zhang, Gang Dong, Lingyan Liang, Yaqian Zhao:
Segment Anything Model Guided Semantic Knowledge Learning For Remote Sensing Change Detection. ICASSP 2024: 5830-5834 - [c9]Jinghan Xu, Zheng Zhou, Mengqi Fan, Zixuan Sun, Shuhan Wang, Zili Tang, Fei Liu, Xiaoyan Liu:
Deep Learning-Assisted Trap Extraction Method from Noise Power Spectral Density for MOSFETs. IRPS 2024: 1-7 - [c8]Zirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang:
New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature. IRPS 2024: 6 - [c7]Sihao Chen
Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET. IRPS 2024: 7 - [c6]Da Wang
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. IRPS 2024: 9 - [c5]Zixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang:
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. IRPS 2024: 72 - 2023
- [c4]Jiahao Song
A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC. CICC 2023: 1-2 - [c3]Zixuan Sun
Investigation of Hot Carrier Enhanced Body Bias Effect in Advanced FinFET Technology. IRPS 2023: 1-6 - [c2]Longda Zhou
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. IRPS 2023: 1-10 - [c1]Zuoyuan Dong, Zixuan Sun
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence. VLSI Technology and Circuits 2023: 1-2
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