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Sei Seung Yoon
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2020 – today
- 2024
- [c9]Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon:
A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm2 at 0.60V for Auto-G1 Applications. VLSI Technology and Circuits 2024: 1-2 - 2023
- [c8]Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baeck, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon:
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V. VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2014
- [c7]Alex Park, Venkat Narayanan, Keith A. Bowman
, Francois Atallah, Alain Artieri, Sei Seung Yoon, Kendrick Yuen, David Hansquine:
Exploiting error-correcting codes for cache minimum supply voltage reduction while maintaining coverage for radiation-induced soft errors. CICC 2014: 1-4 - [c6]Keith A. Bowman, Alex Park, Venkat Narayanan, Francois Atallah, Alain Artieri, Sei Seung Yoon, Kendrick Yuen, David Hansquine:
Trading-off on-die observability for cache minimum supply voltage reduction in system-on-chip (SoC) processors. ITC 2014: 1 - 2013
- [c5]Animesh Datta, Mohamed H. Abu-Rahma, Sachin Dileep Dasnurkar, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu:
Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology. ISQED 2013: 580-584 - [c4]Sachin Dileep Dasnurkar, Animesh Datta, Mohamed H. Abu-Rahma, Hieu Nguyen, Martin Villafana, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu:
Experiments and analysis to characterize logic state retention limitations in 28nm process node. VTS 2013: 1-6 - 2011
- [c3]Mohamed H. Abu-Rahma, Ying Chen, Wing Sy, Wee Ling Ong, Leon Yeow Ting, Sei Seung Yoon, Michael Han, Esin Terzioglu:
Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS. CICC 2011: 1-4 - 2010
- [j1]Mohamed H. Abu-Rahma, Mohab Anis, Sei Seung Yoon:
Reducing SRAM Power Using Fine-Grained Wordline Pulsewidth Control. IEEE Trans. Very Large Scale Integr. Syst. 18(3): 356-364 (2010)
2000 – 2009
- 2008
- [c2]Mohamed H. Abu-Rahma, Kinshuk Chowdhury, Joseph Wang, Zhiqin Chen, Sei Seung Yoon, Mohab Anis:
A methodology for statistical estimation of read access yield in SRAMs. DAC 2008: 205-210 - [c1]Mohamed H. Abu-Rahma, Mohab Anis, Sei Seung Yoon:
A robust single supply voltage SRAM read assist technique using selective precharge. ESSCIRC 2008: 234-237
Coauthor Index
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