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Fei Lu 0004
Person information
- affiliation: University of California at Riverside, USA
Other persons with the same name
- Fei Lu — disambiguation page
- Fei Lu 0001 — San Diego State University, Department of Electrical and Computer Engineering, CA, USA (and 1 more)
- Fei Lyu 0001 (aka: Fei Lv 0001, Fei Lu 0002) — Chinese Academy of Sciences, Institute of Software, Beijing, China (and 1 more)
- Fei Lu 0003 — Zhejiang University, Hangzhou, China
- Fei Lu 0005 — Shandong University, Jinan, China
- Fei Lu 0006 — Hebei University, TianJin, China
- Fei Lu 0008 — University of Louisiana at Lafayette, LA, USA
- Fei Lu 0009 — City University of Hong Kong
- Fei Lu 0010 — North University of China, Key Laboratory of Instrumentation Science & Dynamic Measurement, Taiyuan, China
- Fei Lu 0011 — Beihang University, State Key Laboratory of Virtual Reality Technology and Systems, Beijing, China
- Fei Lu 0012 — University of Electronic Science and Technology of China, Network and Data Security Laboratory of Sichuan Province, Chengdu, China
- Fei Lu 0013 — Dalian University of Technology, China
- Fei Lu 0014 — Chinese Academy of Sciences, Institute of Electronics, State Key Laboratory of Transducer Technology, Beijing, China
- Fei Lu 0015 — University of Science and Technology Beijing, School of Automation and Electrical Engineering, China
- Fei Lu 0016 — Johns Hopkins University, Department of Mathematics, Baltimore, MD, USA (and 2 more)
- Fei Lu 0017 — Wuhan University, Institute for the Development of Central China, China
- Fei Lu 0018 — Civil Aviation University of China, Tianjin, China
- Fei Lu 0019 — National Energy Technology Laboratory, Pittsburgh, PA, USA
- Fei Lu 0020 — Zhejiang University of Technology, College of Information Engineering, Hangzhou, China
- Fei Lu 0021 — North China University of Technology, College of Computer, Beijing, China
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2020 – today
- 2020
- [j4]Chenkun Wang, Feilong Zhang, Fei Lu, Qi Chen, Cheng Li, Albert Z. Wang:
A Study of Transient Voltage Peaking in Diode-Based ESD Protection Structures in 28nm CMOS. IEEE Access 8: 87164-87172 (2020)
2010 – 2019
- 2019
- [j3]Feilong Zhang, Chenkun Wang, Fei Lu, Qi Chen, Cheng Li, X. Shawn Wang, Daguang Li, Albert Z. Wang:
A Full-Chip ESD Protection Circuit Simulation and Fast Dynamic Checking Method Using SPICE and ESD Behavior Models. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 38(3): 489-498 (2019) - 2018
- [c11]Chenkun Wang, Fei Lu, Qi Chen, Feilong Zhang, Cheng Li, Dawn Wang, Albert Z. Wang:
A study of impacts of ESD protection on 28/38GHz RF switches in 45nm SOI CMOS for 5G mobile applications. RWS 2018: 157-160 - 2017
- [c10]Qi Chen, Cheng Li, Fei Lu, Chenkun Wang, Feilong Zhang, Tianru Wu, Xiaoming Xie, Kun Zhang, Xinxin Li, Jimmy Ng, Ya-Hong Xie, Yuhua Cheng, Albert Z. Wang:
Characterization of single-crystalline graphene ESD interconnects. ASICON 2017: 977-980 - [c9]Albert Z. Wang, Fei Lu, Qi Chen, Chenkun Wang, Cheng Li, Feilong Zhang:
Key note: Integrated design-for-reliability for ICs. LASCAS 2017: 1-4 - [c8]Albert Z. Wang, Qi Chen, Cheng Li, Fei Lu, Chenkun Wang, Feilong Zhang, X. Shawn Wang, Jimmy Ng, Ya-Hong Xie, Rui Ma, Li Wang, Lin Lin:
More-Than-Moore: 3D heterogeneous integration into CMOS technologies. NEMS 2017: 1-4 - [c7]Qi Chen, Cheng Li, Fei Lu, Chenkun Wang, Feilong Zhang, Albert Z. Wang, Jimmy Ng, Ya-Hong Xie:
TLP measurement and analysis of graphene NEMS switches for on-chip ESD protection. NEMS 2017: 370-374 - 2016
- [j2]Fei Lu, Rui Ma, Zongyu Dong, Li Wang, Chen Zhang, Chenkun Wang, Qi Chen, X. Shawn Wang, Feilong Zhang, Cheng Li, He Tang, Yuhua Cheng, Albert Z. Wang:
A Systematic Study of ESD Protection Co-Design With High-Speed and High-Frequency ICs in 28 nm CMOS. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(10): 1746-1757 (2016) - 2015
- [c6]Li Wang, Rui Ma, Fei Lu, Albert Z. Wang, Zongyu Dong, Xin Wang, Chen Zhang, Bin Zhao, Siqiang Fan, He Tang:
Function-based ESD protection circuit design verification for BGA pad-ring array. ASICON 2015: 1-4 - [c5]Wei Zhang, Qi Chen, Ming Xia, Rui Ma, Fei Lu, Chenkun Wang, Albert Z. Wang, Ya-Hong Xie:
TLP evaluation of ESD protection capability of graphene micro-ribbons for ICs. ASICON 2015: 1-4 - 2014
- [j1]X. Shawn Wang, Xin Wang, Fei Lu, Chen Zhang, Zongyu Dong, Li Wang, Rui Ma, Zitao Shi, Albert Z. Wang, Mau-Chung Frank Chang, Dawn Wang, Alvin J. Joseph, C. Patrick Yue:
Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection. IEEE J. Solid State Circuits 49(9): 1927-1941 (2014) - [c4]Li Wang, Rui Ma, Chen Zhang, Zongyu Dong, Fei Lu, Albert Z. Wang, Xin Wang, Jian Liu, Siqiang Fan, He Tang, Baoyong Chi, Liji Wu, Tianling Ren:
Scalable behavior modeling for SCR based ESD protection structures for circuit simulation. ISCAS 2014: 2333-2336 - 2013
- [c3]X. Shawn Wang, Xin Wang, Fei Lu, Li Wang, Rui Ma, Zongyu Dong, Li Sun, Albert Z. Wang, C. Patrick Yue, Dawn Wang, Alvin J. Joseph:
A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design. CICC 2013: 1-4 - [c2]Li Wang, Xin Wang, Zitao Shi, Rui Ma, Chen Zhang, Zongyu Dong, Fei Lu, Hui Zhao, Albert Z. Wang:
Scalable behavior modeling for 3D field-programmable ESD protection structures. CICC 2013: 1-4 - [c1]Li Wang, Rui Ma, Chen Zhang, Zongyu Dong, Xin Wang, Zitao Shi, Jian Liu, Lin Lin, Hui Zhao, Fei Lu, Qiang Fang, Chen Yang, Jing Zhan, Tianling Ren, Xinxin Li, Ru Huang, Albert Z. Wang:
Heterogeneous integration of nano enabling devices for 3D ICs. ISLPED 2013: 249-254
Coauthor Index
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