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Hans Reisinger

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2020 – today

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2024
[c12]
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  - conf/irps/GrasserFWRBWVWABGP24
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  - https://dblp.org/rec/conf/irps/GrasserFWRBWVWABGP24
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3
2023
[c11]
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  - conf/irps/BognerSWRG23
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Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser:
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS 2023: 1-7
[c10]
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  - conf/irps/FeilWRBASRGG23
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Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10
2022
[c9]
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  - conf/irps/BognerGWRS22
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Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder:
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS 2022: 1-8
[c8]
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  - conf/irps/FeilRKAGG22
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Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS 2022: 3
2021
[c7]
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  - conf/irps/SalmenFWRRA21
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Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger:
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS 2021: 1-7
2020
[c6]
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  - conf/irps/MaassRAR20
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Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher:
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs. IRPS 2020: 1-6

2010 – 2019

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2019
[c5]
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  - conf/irps/SchlunderWRLRUG19
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Christian Schlünder, Katja Waschneck, Peter Rotter, Susanne Lachenmann, Hans Reisinger, Franz Ungar, Georg Georgakos:
From Device Aging Physics to Automated Circuit Reliability Sign Off. IRPS 2019: 1-12
2018
[j5]
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  - journals/mr/SchlunderPRGR18
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Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger:
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification. Microelectron. Reliab. 82: 1-10 (2018)
[c4]
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  - conf/essderc/PuschkarskyRSGG18
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Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser:
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. ESSDERC 2018: 218-221
[c3]
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  - conf/irps/GrasserSWRRSPPR18
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Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2
[c2]
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  - conf/irps/PuschkarskyGAGR18
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Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger:
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS 2018: 3
2016
[j4]
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  - journals/mr/SchlunderBPMGR16
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Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger:
Degradation and recovery of variability due to BTI. Microelectron. Reliab. 64: 179-184 (2016)
2014
[j3]
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  - journals/mr/RottRRGG14
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Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser:
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectron. Reliab. 54(9-10): 2310-2314 (2014)
[c1]
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  - conf/icicdt/GrasserRWGRRRFK14
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Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer:
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4
2012
[j2]
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  - journals/mr/RottRASKGG12
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Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser:
New insights on the PBTI phenomena in SiON pMOSFETs. Microelectron. Reliab. 52(9-10): 1891-1894 (2012)

2000 – 2009

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2009
[j1]
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  - journals/mr/HehenbergerWRG09
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Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser:
On the temperature and voltage dependence of short-term negative bias temperature stress. Microelectron. Reliab. 49(9-11): 1013-1017 (2009)

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