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Takahiro Iizuka
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2020 – today
- 2023
- [c8]Subhajit Das
, Takahiro Iizuka
Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits. ISDCS 2023: 1-3 - 2021
- [j8]Abhishek Kar
Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. IEEE Access 9: 23786-23794 (2021) - [c7]Soumajit Ghosh, Takahiro Iizuka:
History effect investigation in SOI MOSFET for minimizing impact on circuit performance. ISDCS 2021: 1-5 - 2020
- [c6]Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Hafizur Rahaman, Hans Jürgen Mattausch:
History Effect on Circuit Performance of SOI-MOSFETs. ISDCS 2020: 1-5 - [c5]Fernando Ávila Herrera, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Yoko Hirano, Hans Jürgen Mattausch:
Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation. ISDCS 2020: 1-4 - [c4]Takahiro Iizuka:
Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs. ISDCS 2020: 1-6
2010 – 2019
- 2019
- [j7]Arnab Mukhopadhyay
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs. IEICE Trans. Electron. 102-C(6): 487-494 (2019) - [c3]Takahiro Iizuka, Hiroyuki Hashigami, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs. ISDCS 2019: 1-4 - 2018
- [c2]Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tahahiro Kajiwara, Yuta Tanimoto, Atsushi Saito, Takahiro Iizuka, Dondee Navarro, Hans Jürgen Mattausch:
Compact Modeling for Power Efficient Circuit Design. ESSDERC 2018: 234-237 - 2013
- [j6]Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. 96-C(5): 744-751 (2013) - [j5]Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch:
Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. 96-C(10): 1339-1347 (2013) - 2012
- [j4]Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Modeling of Expansion Effects in LDMOS. IEICE Trans. Electron. 95-C(11): 1817-1823 (2012)
2000 – 2009
- 2009
- [j3]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada:
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. IEICE Trans. Electron. 92-C(5): 608-615 (2009) - [j2]Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto:
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. 92-C(6): 777-784 (2009) - 2008
- [j1]Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. 79(4): 1096-1106 (2008) - 2005
- [c1]Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto:
MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. CICC 2005: 827-830
Coauthor Index
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