A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface - Moosung Kim; Sung-Won Yun; Jungjune Park; Hyun Kook Park; Jungyu Lee; Yeong Seon Kim; Dae-Hoon Na; Sara Choi; Youngsun Song; Jonghoon Lee; Hyun-Jun Yoon; Kangbin Lee; et al. (IEEE International Solid-State Circuits Conference, ISSCC 2022, San Francisco, CA, USA, February 20-26, 2022, 2022)

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110\(μ\)s and 1.2Gb/s High-Speed IO Rate - Doo-Hyun Kim; Hyunggon Kim; Sung-Won Yun; Youngsun Song; Jisu Kim; Sung-Min Joe; Kyung-Hwa Kang; Joonsuc Jang; Hyun-Jun Yoon; Kangbin Lee; Minseok Kim; Joonsoo Kwon; et al. (2020 IEEE International Solid- State Circuits Conference, ISSCC 2020, San Francisco, CA, USA, February 16-20, 2020, 2020)

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640\(μ\)s and 800MB/s I/O rate - Seungjae Lee; Jin-Yub Lee; Il-Han Park; Jong-Yeol Park; Sung-Won Yun; Minsu Kim; Jong-Hoon Lee; Min-Seok Kim; Kangbin Lee; Taeeun Kim; Byungkyu Cho; Dooho Cho; et al. (2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016, 2016)

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology - Daeyeal Lee; Ik Joon Chang; Sangyong Yoon; Joonsuc Jang; Dong-Su Jang; Wook-Ghee Hahn; Jong-Yeol Park; Doo-Gon Kim; Chiweon Yoon; Bong-Soon Lim; ByungJun Min; Sung-Won Yun; et al. (2012 IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, February 19-23, 2012, 2012)