default search action
"Impact of HALO structure on threshold voltage and leakage current in 45nm ..."
Fauziyah Salehuddin et al. (2010)
- Fauziyah Salehuddin, Ibrahim Ahmad, Fazrena Azlee Hamid, Azami Zaharim:
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device. APCCAS 2010: 1147-1150
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.