<?xml version="1.0" encoding="US-ASCII"?>
<dblp>
<inproceedings key="conf/isscc/LiaoYLCKCLLTJ20" mdate="2021-07-07">
<author>Chenu-Hsing Liao</author>
<author>Shang-Hsien Yang</author>
<author>Meng-Yin Liao</author>
<author>Kai-Cheng Chung</author>
<author>Neha Kumari 0001</author>
<author orcid="0000-0001-9589-6521">Ke-Horng Chen</author>
<author>Yin-Hsi Lin</author>
<author>Shian-Ru Lin</author>
<author>Tsung-Yen Tsai</author>
<author>Ying-Zong Juang</author>
<title>3.8 A 23.6ppm/&#176;C Monolithically Integrated GaN Reference Voltage Design with Temperature Range from -50&#176;C to 200&#176;C and Supply Voltage Range from 3.9 to 24V.</title>
<pages>72-74</pages>
<year>2020</year>
<booktitle>ISSCC</booktitle>
<ee>https://doi.org/10.1109/ISSCC19947.2020.9062940</ee>
<crossref>conf/isscc/2020</crossref>
<url>db/conf/isscc/isscc2020.html#LiaoYLCKCLLTJ20</url>
</inproceedings></dblp>
