Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method.

Siyu Liu Xiaohua Ma 0001 Jiejie Zhu Minhan Mi Jingshu Guo Jielong Liu Yilin Chen Qing Zhu 0013 Ling Yang 0003 Yue Hao 0001 Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. 2022 65 Sci. China Inf. Sci. 10 https://doi.org/10.1007/s11432-021-3359-y db/journals/chinaf/chinaf65.html#LiuMZMGLCZYH22