<?xml version="1.0" encoding="US-ASCII"?>
<dblp>
<article key="journals/mj/ZhangSWTG18" mdate="2025-01-19">
<author orcid="0000-0002-8789-7812">Xiaodong Zhang 0013</author>
<author>Xiaohong Sun</author>
<author>Feng Wang</author>
<author>Ting Tian</author>
<author>Huai Gao</author>
<title>Emitter ballasting resistor design of InGaP/GaAs power HBT for high linearity based on Volterra Series distortion analysis.</title>
<pages>28-32</pages>
<year>2018</year>
<volume>76</volume>
<journal>Microelectron. J.</journal>
<ee>https://doi.org/10.1016/j.mejo.2018.04.010</ee>
<ee>https://www.wikidata.org/entity/Q129940554</ee>
<url>db/journals/mj/mj76.html#ZhangSWTG18</url>
</article>
</dblp>
