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"Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors."

N. A. Hastas et al. (2011)

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DOI: 10.1016/J.MICROREL.2010.09.035

access: closed

type: Journal Article

metadata version: 2020-03-18

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  - https://dblp.org/rec/journals/mr/HastasADBTK11
N. A. Hastas, N. Arpatzanis, C. A. Dimitriadis, Julien Brochet, François Templier, G. Kamarinos:
Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors. Microelectron. Reliab. 51(3): 556-559 (2011)

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