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"Improving Resistive RAM Hard and Soft Decision Correctable BERs by Using ..."

Sheyang Ning (2020)

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DOI: 10.1109/TCSII.2019.2960484

access: closed

type: Journal Article

metadata version: 2020-10-08

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  - https://dblp.org/rec/journals/tcas/Ning20
Sheyang Ning:
Improving Resistive RAM Hard and Soft Decision Correctable BERs by Using Improved-LLR and Reset-Check-Reverse-Flag Concatenating LDPC Code. IEEE Trans. Circuits Syst. II Express Briefs 67-II(10): 2164-2168 (2020)

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