• case-insensitive prefix search: default
  e.g., sig matches "SIGIR" as well as "signal"
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Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 53 matches

• 2023
• 
  Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, David Lehninger, Thomas Kämpfe, Gerald Gerlach:
  Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz. DRC 2023: 1-2
• 
  S. Ahmed, A. E. Islam, Daniel Dryden, Kyle J. Liddy, Nolan S. Hendricks, Neil A. Moser, Kelson D. Chabak, Andrew J. Green:
  The $R_{\text{ON}}-V_{\text{BK}}$ Relationship in $\beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. DRC 2023: 1-2
• 
  Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra:
  Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. DRC 2023: 1-2
• 
  Shamiul Alam, Adam N. McCaughan, Ahmedullah Aziz:
  Reconfigurable Superconducting Logic Using Multi-Gate Switching of a Nano-Cryotron. DRC 2023: 1-2
• 
  F. Erdem Arkun, Dan Denninghoff, Haidang Tran, Ryan Tran, Nicholas C. Miller, Michael Elliott, Ryan Gilbert, Ivan Milosavljevic, Georges Siddiqi, Micha Fireman, Andrea L. Corrion, David Fanning, Christi Peterson, Ariel Getter, Andrew Clapper:
  W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz. DRC 2023: 1-2
• 
  Solomon Amsalu Chekol, Rainer Waser, Susanne Hoffmann-Eifert:
  Controllability of Relaxation Behavior in Ag-based Diffusive Memristors. DRC 2023: 1-2
• 
  Young-Eun Choi, Woo-Seok Kim, Myoung Kim, Min-Woo Ryu, Kyung Rok Kim:
  Low Power and High Density Ternary-SRAM for Always-on Applications. DRC 2023: 1-2
• 
  Pengfei Dong, Chenlu Wang, Qinglong Yan, Yingming Wang, Jian Wang, Sami Alghamdi, Zhihong Liu, Jincheng Zhang, Hong Zhou, Yue Hao:
  Ga2O3 Heterojunction PN Diodes with Suppressed Background Carrier Concentration for Improved Breakdown Voltage. DRC 2023: 1-2
• 
  Yu Duan, Andy Xie, Patrick Fay:
  1.7-kV Vertical GaN p-n Diodes with Step-Graded Ion-Implanted Edge Termination. DRC 2023: 1-2
• 
  Daniel M. Fleetwood:
  Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes. DRC 2023: 1-2
• 
  Cristian J. Herrera-Rodriguez, Atsushi Shimbori, Timothy A. Grotjohn:
  $\alpha$-Ga2O3/Diamond Heterojunction PN Diode: Device Fabrication and TCAD Modelling. DRC 2023: 1-2
• 
  Sijay Huang, Biswajit Ray:
  Overcoming the low cell current bottleneck of 3D NAND flash memory array with novel device design. DRC 2023: 1-2
• 
  Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck:
  Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. DRC 2023: 1-2
• 
  Marc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat:
  Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. DRC 2023: 1-2
• 
  Woo-Seok Kim, Young-Eun Choi, Myoung Kim, Min Woo Ryu, Kyung Rok Kim:
  Energy Efficient Ternary Device in 28-nm CMOS Technology with Excellent Short-Channel Effect Immunity and Variation Tolerance Characteristics. DRC 2023: 1-2
• 
  Tae Ryong Kim, Atanu K. Saha, Sumeet Kumar Gupta:
  Analysis of Polarization Switching in HZO/ZrO2 (HZZ) Nanolaminates based on Sub-lattice Phase-field Model. DRC 2023: 1-2
• 
  Ashwani Kumar, Sai Sukruth Bezugam:
  RRAM Based On-Sensor Visual Data Preprocessing for Efficient Image Classification. DRC 2023: 1-2
• 
  Ankit Kumar, Arnab Pal, Kamyar Parto, Wei Cao, Kaustav Banerjee:
  Exploration and Exploitation of Strain Engineering in 2D-FETs. DRC 2023: 1-2
• 
  Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck:
  Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. DRC 2023: 1-2
• 
  Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, Steve J. Pearton:
  Reproducible and High-Temperature Performance of NiO/ $\beta$-Ga2O3 Vertical Rectifiers in Achieving 8.9 kV Breakdown. DRC 2023: 1-2
• 
  Wenwen Li, Dong Ji:
  Small Signal Analysis of GaN IMPATT Diodes for W-band and Sub-THz Wave Generation. DRC 2023: 1-2
• 
  Sebastian Lukas, Vikas Jangra, Nico Rademacher, Michael Gross, Eva Desgué, Maximilian Prechtl, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Satender Kataria, Pierre Legagneux, Georg S. Duesberg, Max Christian Lemme:
  Freely Suspended Platinum Diselenide Membranes without Polymer Support for Piezoresistive Pressure Sensing. DRC 2023: 1-2
• 
  Yue Ma, Sigurd Wagner, Naveen Verma, James C. Sturm:
  $f_{MAX}$ Exceeding 3 GHz in Self-Aligned Zinc-Oxide Thin-Film Transistors with Micron-Scale Gate Length. DRC 2023: 1-2
• 
  Olivier Maher, Nele Harnack, Giacomo Indiveri, Marilyne Sousa, Bernd Gotsmann, Siegfried F. Karg:
  Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural Networks. DRC 2023: 1-2
• 
  Adam Miesle, A. E. Islam, E. Shin, G. Subramanyam, Kevin D. Leedy, S. Ganguli, Daniel Dryden, Kyle J. Liddy, Kelson D. Chabak, Andrew J. Green:
  High breakdown electric field in $\text{Ba}_{\mathrm{x}}\text{Sr}_{1-\mathrm{x}}\text{TiO}_{3}/\text{SiO}_{2}$ dielectric stack formed on (010) $\beta$-Ga2O3 substrates. DRC 2023: 1-2
• 
  Nicholas C. Miller, Matt Grupen, John D. Albrecht:
  Recent Advances in GaN HEMT Modeling using Fermi Kinetics Transport. DRC 2023: 1
• 
  Shubham Mondal, Ding Wang, Jiangnan Liu, Yixin Xiao, Ping Wang, Zetian Mi:
  ScAlN Based Ferroelectric Field Effect Transistors with ITO Channel. DRC 2023: 1-2
• 
  Bhaskaran Muralidharan:
  Quantum transport simulations for the next decade: Exploiting quantum topology in emerging 2D-devices. DRC 2023: 1-2
• 
  Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Joachim Knoch, Thomas Mikolajick, Jens Trommer:
  Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell. DRC 2023: 1-2
• 
  Kai Ni, Yi Xiao, Shan Deng, Vijaykrishnan Narayanan:
  Computational Associative Memory Powered by Ferroelectric Memory. DRC 2023: 1-2

skipping 23 more matches