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Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 470 matches

• 2012
• 
  Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo:
  Unclamped repetitive stress on 1200 V normally-off SiC JFETs. Microelectron. Reliab. 52(9-10): 2420-2425 (2012)
• 
  Markus Ackermann, Verena Hein, Christian Kovács, Kirsten Weide-Zaage:
  A design for robust wide metal tracks. Microelectron. Reliab. 52(9-10): 2447-2451 (2012)
• 
  Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi:
  Modeling read SNM considering both soft oxide breakdown and negative bias temperature instability. Microelectron. Reliab. 52(12): 2948-2954 (2012)
• 
  Hossein Aghababa, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram:
  Probability calculation of read failures in nano-scaled SRAM cells under process variations. Microelectron. Reliab. 52(11): 2805-2811 (2012)
• 
  Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson:
  Circuit design and experimental test of a high power IGBT non-destructive tester. Microelectron. Reliab. 52(11): 2609-2616 (2012)
• 
  Ashraf Ahmed, Yasaman Shadrokh, Lee Coulbeck, Alberto Castellazzi, C. Mark Johnson:
  A closed-loop IGBT non-destructive tester. Microelectron. Reliab. 52(9-10): 2358-2362 (2012)
• 
  Emeka H. Amalu, Ndy N. Ekere:
  Prediction of damage and fatigue life of high-temperature flip chip assembly interconnections at operations. Microelectron. Reliab. 52(11): 2731-2743 (2012)
• 
  Emeka H. Amalu, Ndy N. Ekere:
  High-temperature fatigue life of flip chip lead-free solder joints at varying component stand-off height. Microelectron. Reliab. 52(12): 2982-2994 (2012)
• 
  R. Ardito, Attilio Frangi, Alberto Corigliano, Biagio De Masi, G. Cazzaniga:
  The effect of nano-scale interaction forces on the premature pull-in of real-life Micro-Electro-Mechanical Systems. Microelectron. Reliab. 52(1): 271-281 (2012)
• 
  Hossein Asadi, Mehdi Baradaran Tahoori, Mahdi Fazeli, Seyed Ghassem Miremadi:
  Efficient algorithms to accurately compute derating factors of digital circuits. Microelectron. Reliab. 52(6): 1215-1226 (2012)
• 
  Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou:
  ICMAT 2011 - Reliability and variability of semiconductor devices and ICs. Microelectron. Reliab. 52(8): 1531 (2012)
• 
  Elena Atanassova, Albena Paskaleva, Dencho Spassov:
  Doped Ta₂O₅ and mixed HfO₂-Ta₂O₅ films for dynamic memories applications at the nanoscale. Microelectron. Reliab. 52(4): 642-650 (2012)
• 
  Yvan Avenas, Laurent Dupont:
  Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions - Comparison with infrared measurements. Microelectron. Reliab. 52(11): 2617-2626 (2012)
• 
  Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen:
  Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectron. Reliab. 52(9-10): 1924-1927 (2012)
• 
  M. Enver Aydin, F. Yakuphanoglu:
  Electrical characterization of inorganic-on-organic diode based InP and poly(3, 4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT: PSS). Microelectron. Reliab. 52(7): 1350-1354 (2012)
• 
  Sakir Aydogan, M. Saglam, Abdulmecit Türüt:
  Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies. Microelectron. Reliab. 52(7): 1362-1366 (2012)
• 
  Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi:
  Reliability oriented design of power supplies for high energy physics applications. Microelectron. Reliab. 52(9-10): 2465-2470 (2012)
• 
  Marta Bagatin, Simone Gerardin, Alessandro Paccagnella, Carla Andreani, Giuseppe Gorini, Christopher D. Frost:
  Temperature dependence of neutron-induced soft errors in SRAMs. Microelectron. Reliab. 52(1): 289-293 (2012)
• 
  C. Banc, J. Guinet, E. Doche:
  High performance electronics in long lifetime, continuous operation, industrial products: The art of balancing conflicting interests. Microelectron. Reliab. 52(9-10): 1797-1802 (2012)
• 
  Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán:
  Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52(9-10): 2250-2255 (2012)
• 
  Daniele Bari, Nicola Wrachien, Roberto Tagliaferro, Thomas M. Brown, Andrea Reale, Aldo Di Carlo, Gaudenzio Meneghesso, Andrea Cester:
  Reliability study of dye-sensitized solar cells by means of solar simulator and white LED. Microelectron. Reliab. 52(9-10): 2495-2499 (2012)
• 
  Samed Barnat, Hélène Frémont, Alexandrine Guédon-Gracia, Eric Cadalen:
  Evaluation by three-point-bend and ball-on-ring tests of thinning process on silicon die strength. Microelectron. Reliab. 52(9-10): 2278-2282 (2012)
• 
  Guillaume Bascoul, Philippe Perdu, Maryse Béguin, Dean Lewis:
  High performance thermography with InGaAs photon counting camera. Microelectron. Reliab. 52(9-10): 2087-2092 (2012)
• 
  Rodrigo Possamai Bastos, Frank Sill Torres, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre:
  Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode. Microelectron. Reliab. 52(9-10): 1781-1786 (2012)
• 
  Vitezslav Benda:
  Progress in power semiconductor devices. Microelectron. Reliab. 52(3): 461-462 (2012)
• 
  Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière:
  Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectron. Reliab. 52(9-10): 2159-2163 (2012)
• 
  Peter Borgesen, Liang Yin, Pericles Kondos:
  Acceleration of the growth of Cu₃Sn voids in solder joints. Microelectron. Reliab. 52(6): 1121-1127 (2012)
• 
  Gianluca Boselli:
  ESD design challenges in state-of-the-art analog technologies. Microelectron. Reliab. 52(9-10): 1769-1775 (2012)
• 
  M. R. Bruce, L. K. Ross, C. Scholz, L. Joshi, Vrajesh Dave, C. M. Chua:
  Through silicon in-circuit logic analysis for localizing logic pattern failures. Microelectron. Reliab. 52(9-10): 2043-2049 (2012)
• 
  Arief Suriadi Budiman, H.-A.-S. Shin, B.-J. Kim, S.-H. Hwang, Ho-Young Son, Min-Suk Suh, Q.-H. Chung, K.-Y. Byun, Nobumichi Tamura, Martin Kunz, Young-Chang Joo:
  Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits. Microelectron. Reliab. 52(3): 530-533 (2012)

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