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Publication search results
found 17 matches
- 2023
- Shelja Kaushal
, Ashwani K. Rana:
Reliable and low power Negative Capacitance Junctionless FinFET based 6T SRAM cell. Integr. 88: 313-319 (2023) - Shambhavi Choubey, Deepanita Shah, Vaishali Kikan, Manish Sharma, Rana Gill, Ashwani Kumar:
A Rectangular Dual-Band (30/60 GHz) Patch Antenna with Rectangular Slots and Parasitic Structure for Ka-Band and V-Band Applications. IC3I 2023: 2314-2319 - Shreya Tiwari, Muskan Kumari, Vaishali Kikan, Rana Gill, Ashwani Kumar, Manish Sharma:
A Novel Design Evolution of mmWave W-D Bands Modified Rectangular Patch Antenna with Circular and Rectangular Slots for Future IoT Applications. IC3I 2023: 1843-1848 - 2022
- Shelja Kaushal
, Ashwani K. Rana:
Analytical model of subthreshold drain current for nanoscale negative capacitance junctionless FinFET. Microelectron. J. 121: 105382 (2022) - Ashwani Kumar Rana
, A. V. Ravi Teja
:
A Mathematical Torque Ripple Minimization Technique Based on a Nonlinear Modulating Factor for Switched Reluctance Motor Drives. IEEE Trans. Ind. Electron. 69(2): 1356-1366 (2022) - Kishan Jayasawal
, Ashwani Kumar Rana, A. V. Ravi Teja:
Computationally Efficient Model Predictive Torque Control of Switched Reluctance Motor Drives. IECON 2022: 1-6 - 2021
- Ashwani Kumar Rana, Samant Kumar Singh, A. V. Ravi Teja:
Four quadrant operation of SRM drive based on Modulated Torque Sharing Function. IECON 2021: 1-6 - Samant Kumar Singh, Ashwani Kumar Rana, A. V. Ravi Teja:
High Resolution Initial Rotor Position Estimation of SRM Using Peak Current Detection. IECON 2021: 1-6 - 2020
- Ashwani Kumar Rana, A. V. Ravi Teja:
A Modular Converter Topology with Fast Discharging and Regenerative Capability for any n-Phase SRM Drive. IECON 2020: 1175-1180 - 2019
- Ashwani Kumar Rana, A. V. Ravi Teja:
Torque Ripple Minimization with Maximum Utilization of Inductance Profile in 6/4 3-Phase Switched Reluctance Motor Drives. IECON 2019: 1429-1434 - 2018
- Rajneesh Sharma
, Rituraj S. Rathore
, Ashwani K. Rana
:
Impact of High-k Spacer on Device Performance of Nanoscale Underlap Fully Depleted SOI MOSFET. J. Circuits Syst. Comput. 27(4): 1850063:1-1850063:13 (2018) - Shalu Kaundal, Ashwani K. Rana
:
Evaluation of statistical variability and parametric sensitivity of non-uniformly doped Junctionless FinFET. Microelectron. Reliab. 91: 298-305 (2018) - 2016
- Rituraj Singh Rathore
, Rajneesh Sharma
, Ashwani K. Rana
:
Impact of Work Function Fluctuations on Threshold Voltage Variability in a Nanoscale FinFETs. iNIS 2016: 261-263 - 2015
- Rajneesh Sharma
, Ashwani K. Rana
:
Strained Si: Opportunities and challenges in nanoscale MOSFET. ReTIS 2015: 475-480 - 2014
- Amita Nandal, T. Vigneswaran, Ashwani K. Rana
:
DA-Based Efficient Testable FIR Filter Implementation on FPGA Using Reversible Logic. Circuits Syst. Signal Process. 33(3): 863-884 (2014) - 2011
- Ashwani K. Rana
, Narottam Chand
, Vinod Kapoor:
Modeling gate Current for nano Scale MOSFET with Different gate spacer. J. Circuits Syst. Comput. 20(8): 1659-1675 (2011) - Deepesh Ranka, Ashwani K. Rana, Rakesh Kumar Yadav, Kamalesh Yadav, Devendra Giri:
Performance evaluation of FD-SOI Mosfets for different metal gate work function. CoRR abs/1104.0824 (2011)
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