Abstract:
The impact of channel Germanium content (Ge%) and gate stack Nitrogen content (N%), on bulk trap generation (ΔVoT) time kinetics is studied by using DC and AC stress at d...Show MoreMetadata
Abstract:
The impact of channel Germanium content (Ge%) and gate stack Nitrogen content (N%), on bulk trap generation (ΔVoT) time kinetics is studied by using DC and AC stress at different voltage (VGSTR) and temperature (T) in RMG HKMG Si and SiGe p-FinFETs. It is shown that ΔVOT magnitude is dependent on frequency (f), which can make the resulting threshold voltage shift (ΔVT) dependent on f for some stress conditions. The f dependence of ΔVOT and ΔVT becomes stronger at higher Ge% and weaker at higher N%. The ΔVT time kinetics is modeled for DC and AC stress under different stress conditions (VGSTR, T and f) and for different processes (Ge%, N%).
Date of Conference: 31 March 2019 - 04 April 2019
Date Added to IEEE Xplore: 23 May 2019
ISBN Information: