User profiles for M. Hermle
Martin HermleHead of Research Program Perovskite-Silicon Tandem Photovoltaics Verified email at ise.fraunhofer.de Cited by 20333 |
Input parameters for the simulation of silicon solar cells in 2014
… Schmiga, and M. Hermle, “Effect of incomplete ionization for the description of highly aluminum-…
Maruyama, and M. Tanaka, “Temperature dependence of amorphous/crystalline silicon …
Maruyama, and M. Tanaka, “Temperature dependence of amorphous/crystalline silicon …
Recent progress in monolithic two-terminal perovskite-based triple-junction solar cells
…, J Hohl-Ebinger, F Schindler, M Hermle… - Energy & …, 2024 - pubs.rsc.org
Multi-junction solar cells are the most famous approach to overcome the power conversion
efficiency (PCE) limit of single-junction solar cells. Metal halide perovskite absorber materials …
efficiency (PCE) limit of single-junction solar cells. Metal halide perovskite absorber materials …
Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies
The efficiency of photovoltaic energy conversion is a decisive factor for low-cost electricity from
renewable energies. In recent years, the efficiency of crystalline silicon solar cells in mass …
renewable energies. In recent years, the efficiency of crystalline silicon solar cells in mass …
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
In this work passivated rear contacts are used to replace point contact passivation schemes
for high-efficiency n-type crystalline silicon solar cells. Our structure is based on an ultra-thin …
for high-efficiency n-type crystalline silicon solar cells. Our structure is based on an ultra-thin …
Reassessment of the limiting efficiency for crystalline silicon solar cells
… cell ideality factor m [32]. To some extent, therefore, the FF reduction can be explained by
the VOC reduction at high doping concentrations. However, it is well known that m can vary sig…
the VOC reduction at high doping concentrations. However, it is well known that m can vary sig…
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
… g–l, Average Δn MPP normalized to N dop (logarithmic scale) for the simulations shown in
m–r. m–r, Power output of the different FJ and BJ cells as a function of the c-Si bulk resistivity …
m–r. m–r, Power output of the different FJ and BJ cells as a function of the c-Si bulk resistivity …
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
In this work, the efficiency of n-type silicon solar cells with a front side boron-doped emitter
and a full-area tunnel oxide passivating electron contact was studied experimentally as a …
and a full-area tunnel oxide passivating electron contact was studied experimentally as a …
Tunnel oxide passivated contacts as an alternative to partial rear contacts
Recently, n-type Si solar cells featuring a passivated rear contact, called TOPCon (Tunnel
Oxide Passivated Contact) were reported. The high conversion efficiency of 24.4% and very …
Oxide Passivated Contact) were reported. The high conversion efficiency of 24.4% and very …
Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells
…, J Temmler, H Steinkemper, M Hermle - Solar Energy Materials and …, 2015 - Elsevier
The high work function metal oxides, tungsten oxide (WO x ) and molybdenum oxide (MoO x
), were investigated regarding their ability to form a hole-selective contact for a crystalline …
), were investigated regarding their ability to form a hole-selective contact for a crystalline …
Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water
… an n-type silicon PERL solar cell with B-diffused emitter, the passivated contact enabled
a high Voc of 719 m V and very high fill factors of 83.4% due to its excellent carrier-selectivity …
a high Voc of 719 m V and very high fill factors of 83.4% due to its excellent carrier-selectivity …