High-performance a-In-Ga-Zn-O Schottky diode with oxygen-treated metal contacts
High-performance Schottky diodes based on palladium blocking contacts were fabricated
upon depositing indium-gallium-zinc oxide (IGZO) with high oxygen content. We find that an …
upon depositing indium-gallium-zinc oxide (IGZO) with high oxygen content. We find that an …
Gigahertz operation of a-IGZO Schottky diodes
We present vertical Schottky diodes based on amorphous IGZO with an unprecedented cutoff
frequency of 1.8 GHz at 0 V bias. These diodes have a rectification ratio of up to 10 8 at ±1 …
frequency of 1.8 GHz at 0 V bias. These diodes have a rectification ratio of up to 10 8 at ±1 …
Power saving through state retention in IGZO‐TFT AMOLED displays for wearable applications
S Steudel, JLPJ van der Steen, M Nag… - Journal of the …, 2017 - Wiley Online Library
We present a qHD (960 × 540 with three sub‐pixels) top‐emitting active‐matrix organic light‐emitting
diode display with a 340‐ppi resolution using a self‐aligned IGZO thin‐film …
diode display with a 340‐ppi resolution using a self‐aligned IGZO thin‐film …
Low-voltage gallium–indium–zinc–oxide thin film transistors based logic circuits on thin plastic foil: Building blocks for radio frequency identification application
…, J Van Der Putten, M van Neer, K Myny, M Nag… - Applied Physics …, 2011 - pubs.aip.org
In this work a technology to fabricate low-voltage amorphous gallium–indium–zinc oxide
thin film transistors (TFTs) based integrated circuits on 25 μ m foils is presented. High …
thin film transistors (TFTs) based integrated circuits on 25 μ m foils is presented. High …
An integrated a-IGZO UHF energy harvester for passive RFID tags
…, V Volskiy, M Libois, K Myny, M Nag… - … on Electron Devices, 2014 - ieeexplore.ieee.org
We present an ultrahigh frequency energy harvester based on low temperature processed a-IGZO
(amorphous indium-gallium-zinc oxide) semiconductor on a glass substrate. The …
(amorphous indium-gallium-zinc oxide) semiconductor on a glass substrate. The …
High-performance a-IGZO thin film diode as selector for cross-point memory application
…, L Zhang, A Bhoolokam, M Nag… - IEEE Electron …, 2014 - ieeexplore.ieee.org
We present amorphous indium-gallium-zinc oxide Schottky diodes with unprecedented
current densities of 10 4 and 10 5 A/cm 2 at forward biases of 1.5 and 5 V, respectively. The …
current densities of 10 4 and 10 5 A/cm 2 at forward biases of 1.5 and 5 V, respectively. The …
Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control
In this work, we have reported dual‐gate amorphous indium gallium zinc oxide thin‐film
transistors (a‐IGZO TFTs), where a top‐gate self‐aligned TFTs has a secondary bottom gate and …
transistors (a‐IGZO TFTs), where a top‐gate self‐aligned TFTs has a secondary bottom gate and …
Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors
AV Glushkova, HFW Dekkers, M Nag… - ACS Applied …, 2021 - ACS Publications
In an effort to fabricate In–Ga–Zn oxide (IGZO) thin-film transistors (TFTs) that combine high
performance and high stability, we optimize sputtering conditions to create devices based on …
performance and high stability, we optimize sputtering conditions to create devices based on …
Single‐source dual‐layer amorphous IGZO thin‐film transistors for display and circuit applications
In this study, the authors report on high‐quality amorphous indium–gallium–zinc oxide thin‐film
transistors (TFTs) based on a single‐source dual‐layer concept processed at …
transistors (TFTs) based on a single‐source dual‐layer concept processed at …
High performance a‐IGZO thin‐film transistors with mf‐PVD SiO2 as an etch‐stop‐layer
M Nag, S Steudel, A Bhoolokam… - Journal of the …, 2014 - Wiley Online Library
In this work, we report on high‐performance bottom‐gate top‐contact (BGTC) amorphous‐Indium‐Gallium‐Zinc‐Oxide
(a‐IGZO) thin‐film transistor (TFT) with SiO 2 as an etch‐stop‐…
(a‐IGZO) thin‐film transistor (TFT) with SiO 2 as an etch‐stop‐…