User profiles for A. R. Kovsh
Alexey KovshAlfalume, Inc Verified email at alfalume.com Cited by 12182 |
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
InAs self-organized quantum dots inserted in InGaAs quantum well have been grown on GaAs
substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found …
substrates by molecular beam epitaxy. The lateral size of the InAs islands has been found …
The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers
Temperature invariant output slope efficiency and threshold current (T 0=∞) in the temperature
range of 5–75 C have been measured for 1.3 μm p-doped self-organized quantum dot …
range of 5–75 C have been measured for 1.3 μm p-doped self-organized quantum dot …
Quantum dot lasers: breakthrough in optoelectronics
Semiconductor heterostructures with self-organized quantum dots (QDs) have experimentally
exhibited properties expected for zero-dimensional systems. When used as active layer in …
exhibited properties expected for zero-dimensional systems. When used as active layer in …
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm
Pulsed lasing at 1.3 µm via the exciton ground state is demonstrated for vertical cavity surface
emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The …
emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The …
Device characteristics of long-wavelength lasers based on self-organized quantum dots
The current state of the field of semiconductor lasers operating in the spectral range near
1.3 μm and with an active region represented by an array of self-organized quantum dots is …
1.3 μm and with an active region represented by an array of self-organized quantum dots is …
High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range
Stacked InAs/InGaAs quantum dots are used as an active media of metamorphic InGaAs–InGaAlAs
lasers grown on GaAs substrates by molecular beam epitaxy. High quantum …
lasers grown on GaAs substrates by molecular beam epitaxy. High quantum …
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
SS Mikhrin, AR Kovsh, IL Krestnikov… - Semiconductor …, 2005 - iopscience.iop.org
We report on GaAs-based broad area (100 µm) 1.3 µm quantum dot (QD) lasers with high
CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been …
CW output power (5 W) and wall-plug efficiency (56%). The reliability of the devices has been …
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
…, AS Pauysov, MV Maximov, NN Ledentsov, AR Kovsh… - Semiconductors, 2009 - Springer
Specific features of the fabrication of AlGaAs/GaAs single-junction photovoltaic cells with an
array of quantum dots (QDs) by molecular beam epitaxy have been studied. It was shown for …
array of quantum dots (QDs) by molecular beam epitaxy have been studied. It was shown for …
Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors
Strain-driven decomposition of an alloy layer is investigated as a means to control the structural
and electronic properties of self-organized quantum dots. Coherent InAs/GaAs islands …
and electronic properties of self-organized quantum dots. Coherent InAs/GaAs islands …
InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
Near-1.3-μm lasers based on multiple layers (2, 5 and 10) of InAs/InGaAs/GaAs quantum dots
with high performance have been grown by molecular beam epitaxy. A record differential …
with high performance have been grown by molecular beam epitaxy. A record differential …