Characterization of graphene films and transistors grown on sapphire by metal-free chemical vapor deposition

MA Fanton, JA Robinson, C Puls, Y Liu, MJ Hollander… - Acs Nano, 2011 - ACS Publications
We present a novel method for the direct metal-free growth of graphene on sapphire that
yields high quality films comparable to that of graphene grown on SiC by sublimation. …

Raman topography and strain uniformity of large-area epitaxial graphene

JA Robinson, CP Puls, NE Staley, JP Stitt… - Nano …, 2009 - ACS Publications
We report results of Raman spectroscopy studies of large-area epitaxial graphene grown on
SiC. Our work reveals unexpectedly large variation in Raman shift resulting from graphene …

13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique

…, M Meterelliyoz, J O'Donnell, C Puls… - … Solid-State Circuits …, 2019 - ieeexplore.ieee.org
STT-MRAM has been emerging as a very-promising high-density embedded nonvolatile
memory (eNVM) [1, 2]. Embedded Flash memory has been the leading eNVM technology, but …

2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications

…, J Pellegren, T Pramanik, C Puls… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
In this paper, we discuss array-level MTJ process, performance, and reliability requirements
for STT-MRAM operation in an L4 Cache application. We demonstrate 2 MB arrays of scaled…

Intel PowerVia technology: Backside power delivery for high density and high-performance computing

…, P Penmatsa, C Prasad, C Puls… - … IEEE Symposium on …, 2023 - ieeexplore.ieee.org
This paper presents a high-yielding backside power delivery (BPD) technology, PowerVia,
implemented on Intel 4 finFET process. PowerVia more directly integrates power delivery to …

Technology ready use of single layer graphene as a transparent electrode for hybrid photovoltaic devices

Z Wang, CP Puls, NE Staley, Y Zhang, A Todd… - Physica E: Low …, 2011 - Elsevier
Graphene has been used recently as a replacement for indium tin oxide (ITO) for the transparent
electrode of an organic photovoltaic device. Due to its limited supply, ITO is considered …

Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point

NE Staley, CP Puls, Y Liu - Physical Review B—Condensed Matter and …, 2008 - APS
We measured the conductance fluctuation of bilayer and trilayer graphene devices, which
were prepared on mechanically exfoliated graphene by an all-dry, lithography-free process by …

Comparing flow thresholds and dynamics for oscillating and inclined granular layers

S Aumaitre, C Puls, JN McElwaine, JP Gollub - Physical Review E—Statistical …, 2007 - APS
The onset and dynamics of flow in shallow horizontally oscillating granular layers are studied
as a function of the depth of the layer and imposed acceleration. Measurements of the flow …

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

CP Puls, NE Staley, JS Moon, JA Robinson… - Applied Physics …, 2011 - pubs.aip.org
We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based
device performance based on Raman spectroscopy and low-temperature transport …

[BOOK][B] Electronic band structure effects in monolayer, bilayer, and hybrid graphene structures

C Puls - 2012 - search.proquest.com
… The dissertation of Conor Puls was reviewed and approved by the following: … Outside the
laboratory, I give innite due thanks to my wife Ashley Puls, who has been wholly supportive and …