Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop mechanisms …

Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled
with numerical device models of different sophistication, is routinely adopted not only to …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate
economic growth in a semiconductor industry that is silicon-based and currently faced with …

Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are
reviewed. Data from three de-accelerated tests are presented, which demonstrate a close …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are already …

Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed,
transient, and small-signal measurements. Gate- and drain-lag effects characterized by time …

This paper critically investigates the advantages and limitations of the current-transient
methods used for the study of the deep levels in GaN-based high-electron mobility transistors (…

We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting
diodes (LEDs). A number of reliability tests are presented, and specific degradation …

We review the degradation mechanisms that limit the reliability of GaN-based light-emitting
diodes (LEDs). We propose a set of specific experiments, which is aimed at separately …

Over the last few years, gallium nitride has emerged as an excellent material for the fabrication
of power semiconductor devices. The high critical field (3.3 MV/cm) allows to fabricate …