Characteristics of aluminum substitution technology for self-aligned full metal gate nMOSFETs

Y Mishima, H Shido, T Kurahashi… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
We investigated self-aligned metal gate MOSFETs that feature an ideal low-resistance
aluminum gate using aluminum substitution technology (AST). This technology can be used to …

Multi-wall channel transistor for p-type metal oxide semiconductor field-effect transistor performance improvement

H Shido, M Fukuda, Y Mishima - Japanese journal of applied …, 2006 - iopscience.iop.org
We demonstrate the enhanced hole mobility of p-channel metal oxide semiconductor field
effect transistors (PMOSFETs) using a multi-wall structural channel. Multi-wall channels with a …

Characteristics of nano-grating n-channel MOSFETs for improved current drivability

X Zhu, SI Kuroki, K Kotani, H Shido… - IEICE transactions on …, 2007 - search.ieice.org
Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon
wafers. There was almost no additional process change in device fabrication when the height …

Analysis of Drivability Enhancement Factors in Nanograting Metal–Oxide–Semiconductor Field-Effect Transistors

…, SI Kuroki, K Kotani, M Fukuda, H Shido… - Japanese journal of …, 2008 - iopscience.iop.org
The enhancement factors of a new structure called the nanograting metal–oxide–semiconductor
field-effect transistor (MOSFET), which was proposed to achieve higher current …

Influence on Hole and Electron Mobilities of Using a Multi-Wall Structural Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Y Mishima, H Shido, M Fukuda - Japanese journal of applied …, 2007 - iopscience.iop.org
We investigated the influence on hole and electron mobilities of metal–oxide–semiconductors
field-effect transistors with a multi-wall channel structure. Though electron mobilities are …

[PDF][PDF] Characteristics of Nano-Grating N-Channel MOSFETs for Improved

ZHU Xiaoli, SI KUROKI, K KOTANI, H SHIDO - 2007 - t2r2.star.titech.ac.jp
Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon
wafers. There was almost no additional process change in device fabrication when the height …

[CITATION][C] The Drivability Enhancement Mechanisms in Nano-grating MOSFETs

…, K Shin-Ichiro, K Koji, F Masatoshi, S Hideharu… - Extended abstracts of …, 2007 - cir.nii.ac.jp
SHIDO Hideharu

Temperature Influence on Strained nMuGFETs after Proton Radiation

CCM Bordallo, PG Der Agopian, JA Martino… - ECS …, 2013 - iopscience.iop.org
In this work the influence of temperature on strained n-channel multiple gate devices after
proton irradiation is analyzed for two different splits: unstressed and highly stressed devices. …

" Bukatsudō": The Educational Role of Japanese School Clubs

P Cave - The Journal of Japanese Studies, 2004 - JSTOR
… Bukatsudo are seen as a vital tool of "student guidance" (seito shido). LeTendre even reports
that some teachers see the two as synonymous.57 Nar rowly, "student guidance" means …

[BOOK][B] Index of Japanese Swordsmiths AM

M Sesko - 2012 - books.google.com
" This index contains a comprehensive listing of more than 20,000 Japanese swordsmiths,
from the early days right down to modern times, ie from kotô to shinsakutô. It is not simply a list …